Progress in high work function TCO OLED anode alternatives and OLED nanopixelation

Electrical, optical, and structural properties of ITO co-sputtered IZO films by dual target magnetron sputtering

“…Therefore, ITO co-sputtered IZO film (70 and 100 W-IZTO) with high work function is beneficial to enhance hole injection or extraction in OLEDs and organic based PVs. However, the work function measured in this work from 70 and 100 W-IZTO film is lower than previously reported value by Marks et al (∼6.1 eV) [14,15]. The discrepancy of the work function with the previously reported value may be caused by the difference in the stoichiometry of the IZTO films and the method of preparation.…”

“…Phillips et al, reported that IZTO film prepared by pulsed laser deposition has conductivity within the ranges typically reported for ITO films [10]. In addition, Marks et al, in an investigation of the high work function transparent conducting oxide as an anode for an OLED, reported that an IZTO film has a higher work function (∼6.1 eV) than a commercial ITO (∼4.7 eV) [14,15]. Ambrosini et al also reported a conductivity of 2,500 S/cm in In 2−2x Sn x Zn x O 3−δ bulk pellet [12].…”

“…For this purpose, multi-component oxide films have been extensively explored as alternatives to conventional ITO film. Among the various muticomponent TCO materials, indium zinc tin oxide (IZTO) films have recently been recognized an alternative electrode material, due to their high work function (6.1 eV), good conductivity, high transparency, and low deposition temperature [10][11][12][13][14]. Furthermore, cosubstitutional of In 2 O 3 by ZnO and SnO 2 raised the solubility due to isovalent substitution of a Sn 4+ and Zn 2+ cation for a pair of In 3+ [12].…”

Turn-on voltage reduction of organic light-emitting diode using a nickel-doped indium tin oxide anode prepared by single target sputtering

“…For this application, ITO requires high surface work function and smooth surfaces in addition to high transparency and conductivity. Adjusting surface chemical states of an ITO anode by gaseous plasma bombardment [1][2][3], immersion in solutions [4,5], forming self assembled monolayers [6][7][8], introducing a top metallic oxide [9][10][11] or metal elements into ITO matrix [12,13] has been proved to be able to raise ITO surface work function, while chemical mechanical polishing [14,15] or plasma bombardment [16,17] can lead to an improved surface morphology. Raising ITO surface work function enhances hole injection from ITO into organics due to the reduced potential barrier at the ITO/organics interfaces.…”

Numerical simulation of barrier height effect on output parameters, for a a-Si:H/nc-Si:H based solar cell

“…The ITO work function can vary from 4.3 to 5.3 eV, depending on the stochiometry and the deposition method of ITO layer [8]. In particular, the work function of ITO was modified by a self-assembled monolayer (SAM) and a value of 5.695 eV was obtained [9,10]. 1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 Table 2, we compare our simulation results to the experimental data obtained by Shiyon Liu [4], on the structure n-i-p'-p with a buffer layer.…”