Numerical simulation of barrier height effect on output parameters, for a a-Si:H/nc-Si:H based solar cell

Abstract

Abstract.A numerical simulation by AMPS-1D (Analysis of Microelectronic and photonic structures) program has been carried out to examine the role of the front contact barrier heights φ b0 , ITO/P nanocrystalline layer contact, on the performances of a-Si:H n-i-p'-p solar cell with no back reflector. The p'-nc-Si:H buffer layer has been incorporated at the i/p interface in order to passivate the interface defects. Output parameters, like short circuit current (J SC ), open circuit voltage (V OC ), fill factor (FF) and efficiency (E ff ); for n-i-p'-p structure, are numerically simulated using different values φ b0 . The short circuit current is not very affected by φ b0 . However, for high values of φ b0 the other output cell parameters increase. The best values of V OC , FF and Efficiency can be obtained for a value of φ b0 about 1.65 eV.