Back reflection and temperature effects on n-i-p-p+ amorphous and nanocrystalline silicon based solar cells performances

Belfar, A.; Aït‐Kaci, H.

doi:10.1016/j.ijleo.2016.06.118

Cited by 3 publications

(1 citation statement)

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“…Numerical simulation using AMPS-1D (Analysis of Microelectronic and Photonic Structures) supplies a convenient method to estimate the role of the various parameters present in the fabrication processing of BIPV solar cells, such as the amorphous material quality, the amorphous emitter doping, the boron doped a-SiOx: H layer thickness and so on [9]. AMPS-1D solves numerically the three governing semiconductor device equations (the Poisson's equation (see 1), the hole and electron continuity equations (see 2 and 3) [10].…”

Section: Ii1 Amps-1d Model For Amorphous Siliconmentioning

confidence: 99%

Window Layer Thickness Effect on Amorphous Silicon Oxide Solar Cell Performances

Kouider

Belfar

Belmekki

et al. 2020

AJRESD

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The recent research and developments of a-Si:H based solar cells have greatly promoted its position as low cost solar cell. Unfortunately, a-Si:H solar cells suffer appreciable light induced degradation for thickness greater than 200nm. It has been reported that boron doped hydrogenated amorphous silicon oxide (p-a-SiOx:H) films have a low temperature coefficient compared to those based on hydrogenated amorphous silicon (p-a-Si:H) . Moreover, the solar cells with a p-a-SiOx: H generate more electricity than the solar cells with p-a-Si: H window layer due to the wider band gap (Eg) of these films. We present in this paper a computer simulation on the effects of window layer thickness on the performances of single junction amorphous silicon oxide solar cells. We varied the thickness of the window layer from 5 nm to 25 nm and our simulation results showed that cells parameters are significantly affected window layer thickness. However, the film thickness of the p-a-SiOx:H window layer increased from 5 nm to 25 nm, the power conversion efficiency (PCE) of the solar cells respectively decreased in the ranges of 5.733% to 5.271% .the simulation data are in good agreement with the literature

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Section: Ii1 Amps-1d Model For Amorphous Siliconmentioning

confidence: 99%