2018
DOI: 10.1016/j.ijleo.2018.08.125
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Analysis of the GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure performances at room temperature, for thermo-photovoltaic applications

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Cited by 5 publications
(1 citation statement)
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“…Gallium antimonide (GaSb): GaSb cell with a band gap energy of 0.72 eV and the ability to operate under high radiation intensity can be preferred in TPV systems. On the other hand, GaSb cells have a high cost and should be considered in the use of TPV systems of these cells as they cause toxicity at high temperatures [7,23]. In TPV systems, binary compound materials such as gallium arsenide (GaAs), indium phosphite (InP) and indium arsenide (InAs) are used, and also ternary or quaternary compound materials such as InGaAsSb, AlGaAsSb, InAsSb, InGaSb, InGaAs, CuInGaSe2 and InAsSbP [3,[5][6][7].…”
Section: Thermophotovoltaic Cellsmentioning
confidence: 99%
“…Gallium antimonide (GaSb): GaSb cell with a band gap energy of 0.72 eV and the ability to operate under high radiation intensity can be preferred in TPV systems. On the other hand, GaSb cells have a high cost and should be considered in the use of TPV systems of these cells as they cause toxicity at high temperatures [7,23]. In TPV systems, binary compound materials such as gallium arsenide (GaAs), indium phosphite (InP) and indium arsenide (InAs) are used, and also ternary or quaternary compound materials such as InGaAsSb, AlGaAsSb, InAsSb, InGaSb, InGaAs, CuInGaSe2 and InAsSbP [3,[5][6][7].…”
Section: Thermophotovoltaic Cellsmentioning
confidence: 99%