Product wafer monitoring of ultrashallow channel implants with an elastic metal gate

Abstract

Articles you may be interested inTwo-dimensional ultrashallow junction characterization of metal-oxide-semiconductor field effect transistors with strained silicon Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy Formation of shallow source/drain extensions for metal-oxide-semiconductor field-effect-transistors by antimony implantation Appl. Phys. Lett. 82, 826 (2003); 10.1063/1.1542932Boron penetration in p-channel metal-oxide-semiconductor field-effect transistors enhanced by gate ionimplantation damage Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modelingThe most critical parameter for deep submicron metal-oxide-semiconductor ͑MOS͒ field effect transistors ͑MOSFETs͒ is the threshold voltage (V T ). The device V T is highly dependent on processing; specifically, the ion implanted channel-doping profile. Monitoring the channel doping on product wafers is highly desirable and is a major issue for process engineers. A technique based on a noncontaminating, nondamaging, small diameter metal contact is described for highly sensitive and precise measurements of the channel carrier density profile, dose and V T on product wafers.