Combining metrology techniques for in-line control of thin SiGe:B layers

Cunff, Delphine Le; Nguyen, T.; Duru, Romain; Abbate, F.; Hoglund, Jonny; Nicolas, Laurent; Pernot, Frederic; Wormington, Matthew

doi:10.1117/1.jmm.13.4.041402

Cited by 7 publications

(1 citation statement)

References 7 publications

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“…In this paper, we will describe various fruitful examples of how the HRXRD technique has been adapted and pushed to respond to the metrology challenges related to SiGe epitaxial growth on FD-SOI technology. In the first part of the paper, we will focus on the HRXRD technique implemented on the JVX7300HR inline X-ray metrology tool and briefly describe the classical methodology for automated measurement (namely Ge composition and thickness) of thin SiGe epitaxial layer on bulk silicon substrates [1]. We then introduce the specific issues related to the use of bonded SOI substrates.…”

Section: Introductionmentioning

confidence: 99%

HRXRD for in-line monitoring of advanced FD-SOI technology: Use-cases: AM: Advanced metrology

Cunff

Duru

Durand

et al. 2016

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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This paper describes specific applications illustrating the use of High Resolution X-Ray Diffraction (HRXRD) for the inline control of advanced logic technology nodes. More specifically, an innovative strategy based on HRXRD rockingcurve analysis is described for the control of epitaxial SiGe layers on Fully Depleted Silicon On Insulator (FD-SOI) wafers including consideration of the strategy for managing the tilt between the SOI layer and the bulk silicon substrate. Furthermore, the quality of HRXRD Reciprocal Space Maps (RSMs) obtained in an industrial environment is demonstrated and the benefit of RSMs for inline control is discussed.

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Section: Introductionmentioning

confidence: 99%

HRXRD for in-line monitoring of advanced FD-SOI technology: Use-cases: AM: Advanced metrology

Cunff

Duru

Durand

et al. 2016

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20 nm SiGe pMOS

Durand

Kaufling

Le-Cunff

et al. 2017

Materials Science in Semiconductor Processing

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Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases

Senaratne

Culbertson

et al. 2017

Journal of Applied Physics

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The compositional dependence of the lattice parameter in Ge1-ySny alloys has been determined from combined X-ray diffraction and Rutherford Backscattering (RBS) measurements of a large set of epitaxial films with compositions in the 0 < y < 0.14 range. In view of contradictory prior results, a critical analysis of this method has been carried out, with emphasis on nonlinear elasticity corrections and systematic errors in popular RBS simulation codes. The approach followed is validated by showing that measurements of Ge1-xSix films yield a bowing parameter θGeSi =−0.0253(30) Å, in excellent agreement with the classic work by Dismukes. When the same methodology is applied to Ge1-ySny alloy films, it is found that the bowing parameter θGeSn is zero within experimental error, so that the system follows Vegard's law. This is in qualitative agreement with ab initio theory, but the value of the experimental bowing parameter is significantly smaller than the theoretical prediction. Possible reasons for this discrepancy are discussed in detail.

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Combining metrology techniques for in-line control of thin SiGe:B layers

Cited by 7 publications

References 7 publications

HRXRD for in-line monitoring of advanced FD-SOI technology: Use-cases: AM: Advanced metrology

HRXRD for in-line monitoring of advanced FD-SOI technology: Use-cases: AM: Advanced metrology

In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20 nm SiGe pMOS

Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases

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