Problems of Bi4Ge3O12 and Li2B4O7 single crystal growth by crusibleless variant of AHP method

Antimony-doped germanium single crystals grown from the melt by the axial heat processing (AHP) technique

“…Modeling calculations and observation of crystals grown by AHP [13][14][15][16][17] showed that use of the above two equations predicts the interface position adequately. It should be emphasized that these equations are particularly applicable to the AHP system as the conductive baffle promotes axial heat transfer to the interface.…”

“…More recently, another growth technique called axial heat processing (AHP) was developed and patented to promote stable, planar crystal growth [12]. The technique has been used to grow Bi 4 Ge 3 O 12 , Li 2 B 4 O 7 and other crystals [13][14][15][16][17]. A comparable technique called the submerged heater method (SHM) was also patented [18] and is being investigated by Ostrogorski et al, who used it to grow Sn-Bi, doped Ge, and Si-Ge alloy crystals [19][20][21][22].…”

Heat transfer in growing Bi4Ge3O12 crystals under weak convection: I—thermophysical properties of bismuth germanate in solid and liquid state

“…After that, AHP heater was switched on; a portion of the sample with a thickness of hC1-2 mm was melted. The resulting melt was held at the casing of the heater by the surface tension forces [14].…”

Heat transfer in growing Bi4Ge3O12 crystals under weak convection: II—radiative–conductive heat transfer

“…Investigation of the character of heat transfer during BGO single crystal growth by means of AHP 2.1.1. A brief description of the AHP procedure A schematic of the set-up for growing crystals by the crucibleless AHP2a method [14] is shown in Fig. 1.…”

“…Suppression of natural convection and one-dimensional heat flux [11,14,15] are specific features of this method. These factors along with providing collection of precise data on the temperature boundary conditions enable the AHP method to be a good tool for testing the validity of RCT description during crystal growth.…”