The results of in situ measurements of dependence of growth rate on supercooling of the Bi 4 Ge 3 0i2 (BGO) interface are presented. Supercooling was measured with an optical pyrometer through the growing crystal. The features of interfacial kinetics for (211) and (110) facets are described. The correlation between results of characterization and data on supercooling, and morphology of the interface is analyzed.
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