Heat transfer in growing Bi4Ge3O12 crystals under weak convection: II—radiative–conductive heat transfer

Golyshev, V. D.; Гоник, М. А.

doi:10.1016/j.jcrysgro.2003.10.008

Cited by 3 publications

(2 citation statements)

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“…Investigations of the BGO crystal properties have shown that the absorption coefficient (k c ) of a single crystal at the melting temperature in the spectral range of 500-4000 nm is 0.03 cm −1 [4,5]. But for a k c greater than 0.01 cm −1 , it is necessary to take into account the influence of the crystal on T b (t) [13].…”

Section: Methodology Of the Supercooling Measurementsmentioning

confidence: 99%

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Numerical and Experimental Investigation of Crystal Growth Rate Dependence on Facet Undercooling for Dielectric Crystal Growth from the Melt

Bykova

Golyshev

Гоник

et al. 2006

Heat Transfer Engineering

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Combined experimental and numerical tools are developed and used to define more exactly the growth kinetic relations for (211) crystallographic orientation of Bi 4 Ge 3 O 12 (BGO) crystal growth-namely, the dependence of crystal growth rate V on supercooling, T of the melt/crystal interface. A new apparatus for in situ measurements of the time dependence of the supercooling, T(t), was used, and a new, two-dimensional numerical model was applied to analyze the effect of temperature boundary conditions and faceting phenomena on the character of the observed V( T) dependence. The measurements of the T(t) dependence show that there is a large enough undercooling and a novel effect of the appearance of the local maximum on T(t) dependence at the finish of crystallization. Results on V( T) dependence show that, for the variant of the crystal growth technique used (melt cooling during axial heating process method [AHP]), the type of the V( T) dependence does not depend on boundary conditions. The new investigations illustrate the superlinear behavior for V( T) dependence for (211) BGO crystallographic orientation and show that previous data on sublinear behavior of V( T) dependence for this crystallographic orientation of BGO have not been justified.

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Section: Methodology Of the Supercooling Measurementsmentioning

confidence: 99%

“…The estimations show that h 1 < 0.01 cm for this crystal [24]. This crystal was chosen because the optical and thermophysical properties of Bi 4 Ge 3 O 12 crystal and melt are well known [4,5]. In addition, an investigation of this crystal is of prime practical interest as it is widely used for technological applications [1].…”

Section: Introductionmentioning

confidence: 99%