Prevention of thermal surface damage in GaAs by encapsulated annealing in an arsine ambient

N-type Doping Strategies for InGaAs

“…Group V species tend to evaporate leaving an excess of group III atoms resulting in loss of stoichiometry and degradation of the surface [6,7]. Group V overpressure, proximity capping, and dielectric capping have all been used to prevent the preferential evaporation of group V species [8][9][10][11][12]. Past research suggests that dielectric capping is the most successful method and recent advances with atomic layer deposition have allowed for the creation of thin, dense, and uniform dielectric capping layers to be deposited.…”

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As

“…22,23 For the arsenides, it is necessary to either anneal in group V rich ambient or prevent group V loss via dielectric encapsulation. [24][25][26][27] A variety of dielectric encapsulant films have been used in previous studies. Nitride and oxide encapsulants are commonly used but any film that can prevent As loss during annealing is likely suitable.…”