Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n⁺-In_0.53Ga_0.47As

Abstract

An overview of various processing and dopant considerations for the creation of heavily-doped n-InGaAs is presented. A large body of experimental evidence and theoretical prediction point to dopant vacancy-complexing as the limiting mechanism for electrical activation in heavily Si doped InGaAs and GaAs. Dopant incorporation techniques which require thermal treatment steps to move dopants onto lattice sites like ion implantation and monolayer doping exhibit stable activation up to a limit of ≈1.5 × 1019 cm−3. Growth-based dopant incorporation methods have shown much higher (5 × 1019 cm−3) active concentrations but these activate concentrations are shown in multiple studies to be metastable. Other device specific process-flow constraints with respect to modern CMOS devices which may make some means of dopant incorporation method, or species selection more appropriate for a given application are also discussed.

The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As

“…Firstly, the doping densities N d in the n− layer (solid squares) are both non-uniform and increase gradually from the p+n junction towards the n+ contact layer. This might result from the up-diffusion from the highly doped n+ layer (2 × 10 19 cm −3 ) during the growth of the n− layer [24], which includes a preferential dopant diffusion along TDs.…”

Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm

“…The InGaAs MSDRAM performance and behavior can be explained by several mechanisms 34 : i) although the GIDL injection mechanism was expected to be enhanced due to the lower energy band-gap of In 0.53 Ga 0.47 As with respect to Si 35 (≈ 0.74 eV compared to ≈ 1.12 eV at 300 K), the reduced S/D doping profile concentration 36 limits the effective injection due to the lowering in the drain-gate vertical electric field; ii) the lower energy band-gap may cause parasitic hole injection to occur, not only close to the drain, but also along the whole front interface and during other memory operations such as holding, impacting on the memory retention performance; iii) the larger InGaAs intrinsic carrier concentration 35 Instrumentation and electrical characterization. III-V samples were electrically characterized at room temperature (≈ 300 K) employing a Süss Microtech 300 mm semi-automatic wafer prober station along with an Agilent B1500A semiconductor device analyzer.…”

Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance

“…However, Sn is an amphoteric dopant resulting in compensational doping at high concentrations. 13 VLS growth of GeSn nanowires has demonstrated Sn incorporation well in excess of equilibrium solubility in bulk Ge. For InAs nanowires specifically, the Sn doping is typically below the detection limit of energy-dispersive X-ray (EDX) analysis-based methods, indicating incorporation under equilibrium solubility.…”

“…Particularly, Sn is often used to achieve high n-type carrier concentration in InGaAs, up to 5 × 10 19 cm –3 . However, Sn is an amphoteric dopant resulting in compensational doping at high concentrations . VLS growth of GeSn nanowires has demonstrated Sn incorporation well in excess of equilibrium solubility in bulk Ge.…”