Compound Semiconductor Device Processing

Abstract

The sections in this article are Introduction Doping Processes Ion Implantation Diffusion Methods Epitaxial Methods Isolation Methods Mesa Etching Ion Implantation Isolation Sidegating and Backgating Diffusion Etching Techniques Wet Etching Dry Etching Ohmic Contacts Schottky Barriers and Gates Annealing Dielectrics and Interlayer Isolation Resistors Metallization and Liftoff Processes Metallization Liftoff Processes Backside Processing and Die Separation Backside Processing Die Separation

Thermodynamic modelling of the general NiAs-type structure: A study of first principle energies of formation for binary Ni-containing B8 compounds

“…A large sphere of interest is contact chemistry for compound semiconductors. There, NiAs phases are present as intermediate layers at the interface between III-V semiconductors and transition metals, which are used as contact layers [24]. Hence, ternary III-V-T systems (with T ¼Ni, Pd, Pt) were in focus of research for many years [25,26].…”