Preparing YBCO superconducting films by MOCVD with UV-light irradiation

Hanaoka, Ken-ichi; Goto, Y.; Harima, Hiroshi; Tachibana, Kunihide

doi:10.1016/s0921-4534(05)80226-6

Cited by 9 publications

(3 citation statements)

References 7 publications

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“…The vapor is transported through heated lines by Ar flow into the vertical cold wall reactor. A solution of La(thd) 3 , Al(thd) 3 , and, in some experiments, BiPh 3 precursors in diglyme was used. In order to avoid ligand exchange with BiPh 3 , 3 vol.-% Hthd was added in the starting solution [12].…”

Section: Methodsmentioning

confidence: 99%

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Volatile Surfactant-Assisted MOCVD: Application to LaAlO3 Thin-Film Growth

Molodyk¹,

Korsakov²,

Novojilov³

et al. 2000

Chem. Vap. Deposition

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A new approach to the CVD of oxides with kinetically hindered diffusion, called volatile surfactant-assisted (VSA) metal±or-ganic chemical vapor deposition (MOCVD), consisting of film deposition in the presence of a volatile low melting point oxide (Bi 2 O 3 ) has been developed. The process was applied to the deposition of LaAlO 3 films, and a model of the process was proposed. Epitaxial and textured LaAlO 3 films on various substrates were obtained, both by thermal and VSA MOCVD. A marked improvement in crystalline quality and surface morphology was found for the films deposited by VSA MOCVD. LaAlO 3 films obtained in the presence of Bi 2 O 3 did not contain Bi. A significant increase (up to five times) of the deposition rate was observed for LaAlO 3 films deposited by VSA MOCVD compared with that for the films grown by thermal MOCVD.

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Section: Methodsmentioning

confidence: 99%

“…Several approaches of non-thermal activation, which affect surface mobility and/or process chemistry, have been developed for CVD, namely, plasma-, [1] photo-, [2] ultraviolet-, [3] and laser-activation, [4] etc.…”

Section: Introductionmentioning

confidence: 99%

Volatile Surfactant-Assisted MOCVD: Application to LaAlO3 Thin-Film Growth

Molodyk¹,

Korsakov²,

Novojilov³

et al. 2000

Chem. Vap. Deposition

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“…The elaboration of superconducting YBaCuO layers from thermal decomposition of organometallic(0M) precursors has been reported at relatively high temperatures of about 850°C (1) and at relatively low temperatures of about 580°C (2). The most used OM precursors of Cu, Y and Ba are Cu(L)2 ,Ba(L)2 andY(L)3, where L represents the diketonate ligand having the general formula R,-CO-CH-CO-R,.…”

mentioning

confidence: 99%

Comparative study of copper deposits obtained by thermal decomposition and photo-assisted chemical vapour deposition of 3-diketonate complexes

1993

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The use of the Ba(thd):! precursor, in the elaboration of thin superconductor layers by OMCVD, is not satisfactory because its volatility decreases when it is kept at the sublimation temperature during the deposition. In order to avoid this problem, fluorine complexes, such as Ba(hfa)2 can be used. Nevertheless, its thermal decomposition at high temperature induces the presence of baryum fluoride, which is harmful for obtaining superconductor films with high critical temperature. This work is aiming to study the elaboration of superconducting deposits at low temperature and without fluorine. We have undertaken a program based on a photo-assisted thermal decomposition of various organometallic compounds, which are used as precursors of superconductor layers. Photonic assistance enables to obtain copper deposits at 150°C. The results of the photo-assisted decomposition of C~( t h d )~and C~( h f a )~ are presented here.

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Superconducting Materials

and¹,

Marks²

1996

CVD of Nonmetals

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Preparing YBCO superconducting films by MOCVD with UV-light irradiation

Cited by 9 publications

References 7 publications

Volatile Surfactant-Assisted MOCVD: Application to LaAlO3 Thin-Film Growth

Volatile Surfactant-Assisted MOCVD: Application to LaAlO3 Thin-Film Growth

Comparative study of copper deposits obtained by thermal decomposition and photo-assisted chemical vapour deposition of 3-diketonate complexes

Superconducting Materials

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