Volatile Surfactant-Assisted MOCVD: Application to LaAlO3 Thin-Film Growth

Abstract

A new approach to the CVD of oxides with kinetically hindered diffusion, called volatile surfactant-assisted (VSA) metal±or-ganic chemical vapor deposition (MOCVD), consisting of film deposition in the presence of a volatile low melting point oxide (Bi 2 O 3 ) has been developed. The process was applied to the deposition of LaAlO 3 films, and a model of the process was proposed. Epitaxial and textured LaAlO 3 films on various substrates were obtained, both by thermal and VSA MOCVD. A marked improvement in crystalline quality and surface morphology was found for the films deposited by VSA MOCVD. LaAlO 3 films obtained in the presence of Bi 2 O 3 did not contain Bi. A significant increase (up to five times) of the deposition rate was observed for LaAlO 3 films deposited by VSA MOCVD compared with that for the films grown by thermal MOCVD.

Flux-mediated epitaxy: general application in vapor phase epitaxy to single crystal quality of complex oxide films

“…A similar additive material effect on the thin film growth has been known as vapor-liquid-solid (VLS) [12,13], surfactant-mediated epitaxy (SME) [14] and volatile surfactant-assisted metal-organic chemical vapor deposition (VSA-MOCVD) [15]. However, the successful suppression of formation of BaFe 2 O 4 impurity in the Co 2 Y film by introducing CoO could not be well explained by such a conventional additive material effect.…”

SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

“…1c, d). Surfactant assisted-CVD processes have been reported [29,30]. Such processes have been used for instance to improve the filling of narrow trenches in metallization of microelectronic devices [31].…”

Solution Reactivity Studies for Identification of Promising New ALD and Pulsed CVD Reaction Chemistries

“…This type of 'surfactant' behaviour has previously been reported for C in Zn,(27) I in Cu, (28) and Bi 2 O 3 in LaAlO 3 . (29) To gain insight into the process of zinc incorporation into the films, CVD of Zn on a copper substrate was attempted at 100-170 °C (Figure 10). At 100 and 120 °C, only a small amount of Zn deposition was observed after 1000 × 1 s pulses, while at 140 and 170 °C, CVD of large grains on the surface was observed (zinc deposition was confirmed by XPS).…”