Preparation of Highly (002) Oriented Ti Films on a Floating Si (100) Substrate by RF Magnetron Sputtering

Kwon, Ji Hye; Kim, Du Yun; Kim, Kun-Su; Hwang, Nong‐Moon

doi:10.1007/s13391-019-00182-3

Cited by 9 publications

(4 citation statements)

References 20 publications

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“…The different orientations of the deposited films would have come from the different incident energy of sputtered species into each substrate. Kwon et al [39] stated that different incident energy of positively charged NPs affected the microstructure of the deposited films on floating and grounded substrates during Ti RF sputtering. According to the results of Kwon et al, Ti films tended to grow in the (100) orientation when the incident energy of positively charged NPs In the case of +30 V, a 92 nm thick Ti film was deposited although no NPs were observed as shown in Figure 2e.…”

Section: Ti Thin Film Depositionmentioning

confidence: 99%

Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

2020

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This study is based on the film growth by non-classical crystallization, where charged nanoparticles (NPs) are the building block of film deposition. Extensive studies about the generation of charged NPs and their contribution to film deposition have been made in the chemical vapor deposition (CVD) process. However, only a few studies have been made in the physical vapor deposition (PVD) process. Here, the possibility for Ti films to grow by charged Ti NPs was studied during radio frequency (RF) sputtering using Ti target. After the generation of charged Ti NPs was confirmed, their influence on the film quality was investigated. Charged Ti NPs were captured on amorphous carbon membranes with the electric bias of −70 V, 0 V, +5 V, +15 V and +30 V and examined by transmission electron microscopy (TEM). The number density of the Ti NPs decreased with increasing positive bias, which showed that some of Ti NPs were positively charged and repelled by the positively biased TEM membrane. Ti films were deposited on Si substrates with the bias of −70 V, 0 V and +30 V and analyzed by TEM, field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray reflectivity (XRR). The film deposited at −70 V had the highest thickness of 180 nm, calculated density of 4.974 g/cm3 and crystallinity, whereas the film deposited at +30 V had the lowest thickness of 92 nm, calculated density of 3.499 g/cm3 and crystallinity. This was attributed to the attraction of positively charged Ti NPs to the substrate at −70 V and to the landing of only small-sized neutral Ti NPs on the substrate at +30 V. These results indicate that the control of charged NPs is necessary to obtain a high quality thin film at room temperature.

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Section: Ti Thin Film Depositionmentioning

confidence: 99%

Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

2020

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“…29 It is significant to mention that an alteration of RF plasma power can change the ionization of ambient argon gases, 30 the kinetic energy of bombarding ions, 31 kinetic energy of atoms, 32 reactive species, 33 and the substrate temperature. 34 Therefore, we are likely to manage the stoichiometry of the ZnO film basically by modifying the ambient working gas in RF plasma deposition. 35 3.3.…”

Section: Resultsmentioning

confidence: 99%

“…On the other hand, it has been reported, previously by other authors, that it is not easy to deposit multicomponent materials with highly precise stoichiometry using various substances since dissimilar substances possess dissimilar vaporization rates . It is significant to mention that an alteration of RF plasma power can change the ionization of ambient argon gases, the kinetic energy of bombarding ions, kinetic energy of atoms, reactive species, and the substrate temperature . Therefore, we are likely to manage the stoichiometry of the ZnO film basically by modifying the ambient working gas in RF plasma deposition …”

Section: Resultsmentioning

confidence: 99%

Impact of Radio Frequency Plasma Power on the Structure, Crystallinity, Dislocation Density, and the Energy Band Gap of ZnO Nanostructure

et al. 2021

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The aim of this study is to investigate the effect of radio frequency (RF) plasma power on the morphology, crystal structure, elemental chemical composition, and optical properties of ZnO nanostructure using a direct current magnetron sputtering technique. This study emphasized that the growth rate and surface morphology of the polycrystalline ZnO were enhanced as the radio frequency (RF) plasma power increased. This can be observed by fixing other parameters such as the growth time, substrate temperature, and chamber partial pressure. The RF plasma power alteration from 150 to 300 W can produce uniform nanograin, spheroid, and nanorods. Additionally, the RF plasma power alteration leads to the alteration in the ZnO nanorod diameter from 14 to 202 nm. It was observed that the XRD intensities are increased at higher plasma powers. This, perhaps, can be inferred from the transformation of the granular microcrystals to the needlelike or platelike large crystals, as already examined using SEM images. This also has an impact on the average crystalline size, which increased from 10 to 40 nm on increasing the RF plasma power. Moreover, the increase of the RF plasma power has an obvious impact upon the optical band-gap energy, which was accordingly decreased from 3.26 to 3.22 eV. Finally, the absorption band edge was shifted to a lower-energy region due to the quantum size effect at the nanorange.

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“…This difference is thought to come from the difference in the incident energy of sputtered species on the substrates. According to Kwon et al [37], the different incident energy on floating and grounded substrates during Ti RF sputtering affected the orientations of the films. The (100)-oriented Ti films were obtained with high incident energy, whereas the (002)-oriented Ti films were obtained with low incident energy.…”

Section: Deposition Of Ti Thin Films Under Various Pressuresmentioning

confidence: 99%

Effect of Pressure on the Film Deposition during RF Magnetron Sputtering Considering Charged Nanoparticles

et al. 2021

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Non-classical crystallization, in which charged nanoparticles (NPs) are the building blocks of film growth, has been extensively studied in chemical vapor deposition (CVD). Recently, a similar mechanism of film growth has been reported during radio frequency (RF) sputtering with a Ti target and DC magnetron sputtering using an Ag target. In this study, the effect of pressure on the generation of Ti NPs and on the film deposition was studied during RF sputtering with a Ti target. Ti NPs were captured on transmission electron microscopy (TEM) membranes with the electric biases of −30, 0, and +50 V under 20 and 80 mTorr. The number densities of the Ti NPs were 134, 103, and 21 per 100 × 100 nm2, respectively, with the biases of −30, 0, and +50 V under 20 mTorr and were 196, 98, and 0 per 100 × 100 nm2, respectively, with the biases of −30, 0, and +50 V under 80 mTorr, which was analyzed by TEM. The growth rate of Ti films deposited on Si substrates was insensitive to the substrate bias under 20 mTorr but was sensitive under 80 mTorr, with the thicknesses of 132, 133, 97, and 29 nm, respectively, after being deposited for 15 min with the substrate biases of −30, −10, 0, and +50 V. This sensitive dependence of the film growth rate on the substrate bias under 80 mTorr is in agreement with the sensitive dependence of the number density of Ti NPs on the substrate bias under 80 mTorr.

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Preparation of Highly (002) Oriented Ti Films on a Floating Si (100) Substrate by RF Magnetron Sputtering

Cited by 9 publications

References 20 publications

Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

Impact of Radio Frequency Plasma Power on the Structure, Crystallinity, Dislocation Density, and the Energy Band Gap of ZnO Nanostructure

Effect of Pressure on the Film Deposition during RF Magnetron Sputtering Considering Charged Nanoparticles

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