Preparation and evaluation of LaNiO3 thin film electrode with chemical solution deposition

Dielectric and piezoelectric properties of highly (100)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer

“…The electrical resistivity of the LNO thin film on Si (1 0 0) substrate is 1.4 Â 10 À3 O cm, which is close to the reported values [13,17,18]. Compared with the LNO electrode on Si (1 0 0) substrate, the electric resistivity of hybrid electrodes LNO/Pt is much smaller (2.0 Â 10 À5 O cm).…”

“…LNO thin films were deposited on Si (1 0 0) and Pt-coated Si substrates with reference to a reported method [13]. BTO thin films were grown on the obtained LNO buffer layer by a chemical solution deposition (CSD) process, in which barium metal, Ti-isopropoxide were used as starting materials, 2-methoxyethonal was used as solvent.…”

“…It was reported that highly (1 0 0)-oriented LNO films can be obtained easily by depositing on the Si(1 0 0) substrate [13,17,18], whereas, it is difficult to get good crystallinity and highly (1 0 0)-oriented LNO films on Pt(1 1 1)/ TiO x /SiO 2 /Si substrate [8,19]. However, our results showed that good crystallinity, highly (1 0 0)-oriented LNO thin films could be obtained on Pt (1 1 1)/TiO x /SiO 2 /Si substrates as well as on the Si(1 0 0) substrate.…”

Dielectric and optical properties of BiFeO3–(Na0.5Bi0.5)TiO3 thin films deposited on Si substrate using LaNiO3 as buffer layer for photovoltaic devices

“…LaNiO3 thin films as bottom electrode were deposited on Si substrates with reference to a reported method [24]. (1 − x)BFO-xNBT thin films with x = 0.05, 0.10, and 0.15 were prepared on Si substrates by a sol-gel process [25,26] acid was added to promote alcoholysis.…”

Orientation control and electrical properties of PZT/LNO capacitor through chemical solution deposition

“…In our previous work, 9 LNO thin film with relatively good conductivity and preferred orientation has been prepared by the CSD, and the PZT/LNO capacitor with ferroelectric property was also deposited by a CSD. However, the CSD-derived PZT/LNO capacitor shows inferior electrical properties because of the relatively high dielectric loss and low conductivity.…”