2006
DOI: 10.1016/j.jeurceramsoc.2005.09.037
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Orientation control and electrical properties of PZT/LNO capacitor through chemical solution deposition

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Cited by 53 publications
(20 citation statements)
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“…The orientation control of LNO films on the Si substrate has been carried out by a variety of chemical and physical approaches. Usually, the chemical solution deposition methods can prepare both (1 0 0)-and (11 0)-oriented LNO films by modifying the concentration or solvent of the precursor solution [14,15] or by changing the heating rates of the temperature range of 200-400 1C [16]. Pulsed laser deposition (PLD) methods can obtain (1 0 0)-and (11 0)-oriented and polycrystalline LNO films using an oriented MgO film as a buffer layer [17], while the radio frequency (RF) magnetron sputtering methods often result in (1 0 0)-oriented LNO films by heating substrate from 150 to 600 1C [18][19][20] and (11 0) oriented LNO films by cold deposition [21].…”
Section: Introductionmentioning
confidence: 99%
“…The orientation control of LNO films on the Si substrate has been carried out by a variety of chemical and physical approaches. Usually, the chemical solution deposition methods can prepare both (1 0 0)-and (11 0)-oriented LNO films by modifying the concentration or solvent of the precursor solution [14,15] or by changing the heating rates of the temperature range of 200-400 1C [16]. Pulsed laser deposition (PLD) methods can obtain (1 0 0)-and (11 0)-oriented and polycrystalline LNO films using an oriented MgO film as a buffer layer [17], while the radio frequency (RF) magnetron sputtering methods often result in (1 0 0)-oriented LNO films by heating substrate from 150 to 600 1C [18][19][20] and (11 0) oriented LNO films by cold deposition [21].…”
Section: Introductionmentioning
confidence: 99%
“…In order to solve these problems, some conductive oxide thin film materials such as RuO 2 , IrO 2 , YBa 2 Cu 3 O 7 − δ , LaNiO 3 (LNO), BaPbO 3 , SrRuO 3 and La 0.5 Sr 0.5 CoO 3 have been investigated as promising alternatives for bottom electrodes of integrated ferroelectric devices. It has been demonstrated that conductive oxide thin films, especially those with perovskite structure, can effectively improve polarization fatigue endurance of the ferroelectric thin films [4][5][6]. In addition, these conductive oxide thin films used as bottom electrodes can simultaneously act as excellent seeding or buffer layers providing more nucleation sites.…”
Section: Introductionmentioning
confidence: 99%
“…1,2 In the form of thin/thick films PZT has a wide range of applications in non-volatile random access memories for computers, 3 piezoelectric micro-sensors 4,5 and intergraded capacitors. 6,7 Various processing methods have been used to fabricate thin/thick film PZT, which include chemical vapour deposition, 8 physical vapour deposition 9 and sol-gel methods. 10 Apart from those, a novel processing method called electrohydrodynamic deposition, has recently generated attention for the preparation of bio-materials, 11 functional ceramics 12,13 and polymeric fibers.…”
Section: Introductionmentioning
confidence: 99%