Dielectric and optical properties of BiFeO3–(Na0.5Bi0.5)TiO3 thin films deposited on Si substrate using LaNiO3 as buffer layer for photovoltaic devices

Qin, Wei; Guo, Yiping; Guo, Bing; Gu, Mingyuan

doi:10.1016/j.jallcom.2011.10.011

Cited by 20 publications

(7 citation statements)

References 41 publications

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“…Because of room-temperature coupling between ferroelectric and magnetic order parameters, it brings forth a novel phenomenon known as magnetoelectric effect (ME), in which polarization can be tuned by magnetic field and vice versa. This coupling provides an additional opportunity for the design of magnetoelectric and spintronic devices [2][3][4]. Multiferroic materials have gained tremendous attention on account of their potential applications in various fields, such as bubble memory device, microwave, satellite communication, audio-video, digital recording [4,5], sensor, multiple state memory element, electro-ferromagnetic resonance  device [6], thin film capacitor, non-volatile memory [7], optoelectronics, solar energy device [4], highdensity ferroelectric magnetic random access memory [8], and permanent magnet [9].…”

Section: Introductionmentioning

confidence: 99%

Structural, magnetic and dielectric properties of nano-crystalline Ni-doped BiFeO3 ceramics formulated by self-propagating high-temperature synthesis

Chaudhari

Mahajan²,

Jagtap

et al. 2013

J Adv Ceram

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Ni-doped BiFeO 3 powders with the composition BiFe 1x Ni x O 3 (x = 0.05, 0.1 and 0.15) were prepared by a self-propagating high-temperature synthesis (SHS), using metal nitrates as oxidizers and glycine as fuel. The X-ray diffraction (XRD) patterns depict that Ni-doped BiFeO 3 ceramics crystallize in a rhombhohedral phase. The scanning electron micrographs of Ni-doped BiFeO 3 ceramics show a dense morphology with interconnected structure. It is found that, the room-temperature magnetization measurements in Ni-incorporated

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Section: Introductionmentioning

confidence: 99%

Structural, magnetic and dielectric properties of nano-crystalline Ni-doped BiFeO3 ceramics formulated by self-propagating high-temperature synthesis

Chaudhari

Mahajan²,

Jagtap

et al. 2013

J Adv Ceram

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show abstract

“…In this study, the origin of loss may come from the interaction of the applied AC field and phonon within the crystal lattice of the material. The theory of the loss mechanism is related to the energy of photon as known as "Planck-Einstein relation" hν, where ν is the frequency of AC field [44,45], is absorbed during thermal phonon collisions, which occupy higher energies as an intrinsic loss mechanism. In Table 4, ε r and CSC values are summarized for all films.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing

Bayrak

Özgit-Akgün

Goldenberg

2017

Journal of Non-Crystalline Solids

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Among perovskite oxide materials, BaSrTiO x (BST) has attracted great attention due to its potential applications in oxide-based electronics. However, reliability and efficiency of BST thin films strongly depend on the precise knowledge of the film microstructure, as well as optical and electrical properties. In the present work, BST films were deposited at room temperature using radio frequency magnetron sputtering technique. The impact of deposition pressure, partial oxygen flow, and post-deposition annealing treatment on film microstructure, surface morphology, refractive index, and dielectric constants were studied by X-ray diffraction, scanning electron microscopy, spectrophotometry, ellipsometry, photoluminescence, as well as capacitance-voltage measurements. Well-adhered and uniform amorphous films were obtained at room temperature. For all as-deposited films, the average optical transmission was~85% in the VIS-NIR spectrum. The refractive indices of BST films were in the range of 1.90-2.07 (λ = 550 nm). Post-deposition annealing at 800°C for 1 h resulted in polycrystalline thin films with increased refractive indices and dielectric constants, however reduced optical transmission values. Frequency dependent dielectric constants were found to be in the range of 46-72. However, the observed leakage current was relatively small, about 1 μA. The highest FOM values were obtained for films deposited at 0.67 Pa pressures, while charge storage capacity values increased with increased deposition pressure. Results show that room-temperature grown BST films have potential for device applications.

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“…These materials have gained tremendous attention on account of their potential applications in various fields. It proves it's necessity in digital recording (Qin et al 2012), sensor, multiple state memory element, electro ferromagnetic resonance device (Shami et al 2011), thin film capacitor, non-volatile memory (Garcia et al 2010), optoelectronics, solar energy device, high density ferroelectric and magnetic random access memory . Ferrites are also used in camouflaging military aircrafts and missiles against radar detection (Bhuiyan et al 2015).…”

Section: Introductionmentioning

confidence: 99%

Structural, Morphological and Magnetic Properties of Nd and Co co-doped BiFeO3 Ceramics at Room temperature

Mariam

Choudhury

2017

J Bangladesh Acad Sci

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Dielectric and optical properties of BiFeO3–(Na0.5Bi0.5)TiO3 thin films deposited on Si substrate using LaNiO3 as buffer layer for photovoltaic devices

Cited by 20 publications

References 41 publications

Structural, magnetic and dielectric properties of nano-crystalline Ni-doped BiFeO3 ceramics formulated by self-propagating high-temperature synthesis

Structural, magnetic and dielectric properties of nano-crystalline Ni-doped BiFeO3 ceramics formulated by self-propagating high-temperature synthesis

Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing

Structural, Morphological and Magnetic Properties of Nd and Co co-doped BiFeO3 Ceramics at Room temperature

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