Dielectric and piezoelectric properties of highly (100)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer

Guo, Yiping; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Tsuneharu; Kato, Kazumi

doi:10.1016/j.jcrysgro.2005.07.017

Cited by 87 publications

(55 citation statements)

References 20 publications

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“…As schematically shown in Figure 2a, the PFM technique was used to measure the piezoelectric constant, d 33 (the induced polarization per unit stress applied in an out-of-plane direction), of the BaTiO 3 thin films on Si substrates. Figure 2b 23,24 and verifies that our process was well optimized. Figure 3a-i,ii shows schematics of the appearance and cross-sectional structure of the poled BaTiO 3 nanogenerator in its original state without bending.…”

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confidence: 54%

Piezoelectric BaTiO₃Thin Film Nanogenerator on Plastic Substrates

et al. 2010

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The piezoelectric generation of perovskite BaTiO 3 thin films on a flexible substrate has been applied to convert mechanical energy to electrical energy for the first time. Ferroelectric BaTiO 3 thin films were deposited by radio frequency magnetron sputtering on a Pt/Ti/SiO 2 /(100) Si substrate and poled under an electric field of 100 kV/cm. The metal-insulator (BaTiO 3 )-metal-structured ribbons were successfully transferred onto a flexible substrate and connected by interdigitated electrodes. When periodically deformed by a bending stage, a flexible BaTiO 3 nanogenerator can generate an output voltage of up to 1.0 V. The fabricated nanogenerator produced an output current density of 0.19 µA/cm 2 and a power density of ∼7 mW/cm 3 . The results show that a nanogenerator can be used to power flexible displays by means of mechanical agitations for future touchable display technologies.KEYWORDS BaTiO 3 , thin film, piezoelectric, flexible electronics, nanogenerator, energy harvesting E nergy harvesting technologies that convert existing sources of energies, such as thermal energy as well as vibrational and mechanical energy from the natural sources of wind, waves, or animal movements into electrical energy, is attracting immense interest in the scientific community. [1][2][3][4][5][6] The fabrication of nanogenerators is particularly interesting because it can even scavenge the biomechanical energy from inside the human body, such as the heart beat, blood flow, muscle stretching, or eye blinking, and turn it into electricity to power implantable biodevices. [7][8][9] One way of harvesting electrical energy from the mechanical energy of ambient vibrations is to utilize the piezoelectric properties of ferroelectric materials. Piezoelectric harvesting has been proposed and investigated by many researchers.10-14 Chen et al. 12 reported on the fabrication of a nanogenerator that involves the use of lead zirconate titanate (PbZr x Ti 1-x O 3 , PZT) nanofibers on a bulk Si substrate. The PZT nanofibers were connected to interdigitated electrodes (IDEs) and, when pressure was applied perpendicularly to the nanogenerator surface, the nanogenerator producedanoutstandingoutputvoltage.Wangandco-workers 13,14 used piezoelectric ZnO nanowires to develop a multiple lateral-nanowire-array integrated nanogenerator (LING) 13 and a high-output nanogenerator (HONG) 14 on plastic substrates. They also demonstrated the feasibility of harvesting energy from the breath and heartbeat of animals. 9 As of today, the nanogenerator has an output voltage of 2 V, and the power generated can be used to power a commercial light-emitting diode (LED).14 Recently, there have been attempts to transfer flexible perovskite materials and capacitors onto flexible substrates for the purpose of utilizing the high inherent piezo-properties of ferroelectric materials from bulk substrates. 15,16 In those attempts, perovskite thin films (PZT and BaTiO 3 ) deposited on bulk substrates were annealed at high temperatures and transferred onto plastic sub...

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Piezoelectric BaTiO₃Thin Film Nanogenerator on Plastic Substrates

et al. 2010

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“…7 Different top and bottom electrodes used in the fabrication of MFIS structure are responsible for the asymmetry observed in the C-V characteristics. 11 In addition, counterclockwise direction of the arrows (indicated in the figures) confirms that, the observed hysteresis behavior is induced by the ferroelectric polarization. 12 It is that, capacitance of the MFIS structure with ZnO channel is lower as compared to that with Al: ZnO channel.…”

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confidence: 70%

Electrical properties of BaTiO3 based – MFIS heterostructure: Role of semiconductor channel carrier concentration

et al. 2014

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Effect of semiconductor channel carrier concentration on the modifications in the electrical properties of Ag/BaTiO 3 /SrTiO 3 /ZnO Metal-Ferroelectric-InsulatorSemiconductor (MFIS) heterostructure has been investigated. Under 4 V applied voltage, low leakage current density ∼3.2 × 10 −6 A/cm 2 , has been observed in ZnO based MFIS heterostructure, which becomes ∼5.0 × 10 −6 A/cm 2 for MFIS with Al:ZnO channel. Observation of counterclockwise butterfly shaped C-V behavior confirms that, hysteresis in C-V is due to spontaneous ferroelectric polarization and field effect. A device with ZnO semiconductor exhibit ∼2700% modulation which decreases to ∼800% for Al: ZnO channel with good retention behavior. Pulse induced write/erase repeatability of source/drain current confirms the usefulness of the presently studied devices for non-volatile switching memory application. C 2014 Author(s

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“…The grain size is increased with increasing the annealing temperatures, changing from 14 to 55 nm in diameter. It is noted that the BTO films in this work exhibit much smaller grain sizes as compared to other reported BTO films [42,43]. The difference is considered to be the result of the influence of microstructure of the LNO buffer layer.…”

Section: Grain Size Effectmentioning

confidence: 57%

Epitaxial Integration of Ferroelectric BaTiO3 with Semiconductor Si: From a Structure- Property Correlation Point of View

Qiao¹,

Bi²

2011

Ferroelectrics - Material Aspects

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Dielectric and piezoelectric properties of highly (100)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer

Cited by 87 publications

References 20 publications

Piezoelectric BaTiO₃Thin Film Nanogenerator on Plastic Substrates

Piezoelectric BaTiO₃Thin Film Nanogenerator on Plastic Substrates

Electrical properties of BaTiO3 based – MFIS heterostructure: Role of semiconductor channel carrier concentration

Epitaxial Integration of Ferroelectric BaTiO3 with Semiconductor Si: From a Structure- Property Correlation Point of View

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Dielectric and piezoelectric properties of highly (100)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer

Cited by 87 publications

References 20 publications

Piezoelectric BaTiO3Thin Film Nanogenerator on Plastic Substrates

Piezoelectric BaTiO3Thin Film Nanogenerator on Plastic Substrates

Electrical properties of BaTiO3 based – MFIS heterostructure: Role of semiconductor channel carrier concentration

Epitaxial Integration of Ferroelectric BaTiO3 with Semiconductor Si: From a Structure- Property Correlation Point of View

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Piezoelectric BaTiO₃Thin Film Nanogenerator on Plastic Substrates

Piezoelectric BaTiO₃Thin Film Nanogenerator on Plastic Substrates