Preparation and characterization of CdTe thin films deposited by CSS

Abstract

temperature. The CdTe source and the substrate are separated by a smal! distance and the source is maintained at a higher temperature than the substrate.The CdTe dissociates into its elements (2CdTe(s) + 2Cd(g) + Te2(g) ) which recombine on the substrate surface, to form the CdTe film The apparatus developed for the deposition of CdTe films by the CSS technique is shown in Fig. 1. The most significant characteristics of CdTe polycrystalline thin films were grown using a new procedure based on the C.S.S. Technique. With an adequate control of the deposition parameters, it was possible to grow CdTe films with grain sizes greater than 45 pm. The samples were characterized by XRD, SEM and EDS measurements. The studies revealed that the substrate and sublimation temperatures influence strongly the crystallographic orientation of the films, which grow with a mixed structure of cubic and hexagonal phases. EDS analysis carried out on different samples, showed a significant iinfluence of some deposition parameters on the chemical composition of the CdTe films.The effect of introducing 0 2 during the deposition of the CdTe films, on the resistivity and crystallographic properties will also be discussed.

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe2and InSe2Targets

“…1 shows the mean grain sizes (D) and full width at half maximum (FWHM) of the predominant (112) diffraction peak. The mean grain sizes of the crystallites in each CIS thin film were estimated from the FWHM of the (112) diffraction peak using the DebyeScherrer formula, D = 0.94λ / ωcosθ, where λ is the wavelength of Kα radiation of Cu (λ = 0.15406 nm), ω is the FWHM of the (112) diffraction peak and θ is the angle corresponding to the (112) reflection [14][15][16]. The FWHM of the (112) [18], indicating that the dislocation in the CIS thin films was reduced significantly at annealing temperatures ~ 350°C.…”

Characterization of CdSxTe1-xthin films through thermoelectric power measurements

“…These values are used to correct the measurements of the thermoelectric power in the CdTe samples. To eliminate the contact potential generated in the Au-probe/CdTe system, which affects the thermoelectric voltage measurements, the CdTe samples are submitted to a chemical treatment such as the one described in [9]. Additionally, special care is taken in order to prevent electric conduction along the p + -CdTe surface layer formed by the chemical treatment.…”

Annealing Effect of DC-RF Coupled Co-sputtered Boron-Aluminium Nitride Thin Films

“…In The crystallite size is calculated based on XRD results by using Debye Scherer formula [14]: D = 0.9 λ / β cosθ (1) where λ is wavelength (in Angstrom), β is the broadening of diffraction peak (in radians), θ is the Bragg diffraction angle. The calculated results are shown in Table I.…”