Power integrated circuits—A brief overview

Baliga, B. Jayant

doi:10.1109/t-ed.1986.22849

Cited by 30 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, there must be a system which can transfer the electrical load without any trouble; this can be done by monitoring power plants as suggested in [13]. For this, smart switches are widely used to switch the load from grid power to the backup power system for the smooth operations and self-protection [18].…”

Section: Problem Statementmentioning

confidence: 99%

Optimization of Power Plant for Telecom Sector Based on Embedded System

Karim

Memon

Ansari

et al. 2019

Mehran Univ. res. j. eng. technol.

View full text Add to dashboard Cite

Modern Telecom Sector is eventually facing exceptionally tough challenges because of continuous and unexpected increase in power density requirement for the communicating machinery and equipment. To fulfil the power requirements for the equipment, a significant architecture and an optimal technique must be introduced. In this paper, a microcontroller-based optimization use of power-density has been carried out. Meeting above requirements, various equipment and electronic devices are employed. We have designed a microcontroller-based system via PROTEUS Virtual System Modeling to acquire efficient and effective results. The main focus of our work is to supply the power to Telecom equipment in meantime. The power is feeding on batteries and DG (Diesel Generator) set, depending on the condition of the power requirements. The changeover operations are performed by different relays, which are dully programmed via a microcontroller in Keil software. The power capacity of Telecom ((Telecommunication) equipment is ranged from 39-48 Volts DC. The rectification process is done by switch mode rectifiers instead of linear rectifiers. Because the switch-mode rectifier technology has brought fabulous improvements in power density as compared to linear rectifiers. This is done via simulation of the smart switch in PROTEUS software. The outcomes of the proposed system are costeffective in terms of fuel consumption of DG.

show abstract

Section: Problem Statementmentioning

confidence: 99%

Optimization of Power Plant for Telecom Sector Based on Embedded System

Karim

Memon

Ansari

et al. 2019

Mehran Univ. res. j. eng. technol.

View full text Add to dashboard Cite

show abstract

“…When the device is operating in MOSFET mode, the voltage of node A in a conventional SA-LTIGBT without an n-buffer can be calculated as follows: (1) where MOSFET I is the current flowing into the N+ collector when the device is operating in the MOSFET mode, drift R is the n-drift region sheet resistance, and P L is the width of the P+ collector layer. The simplest method to enhance drift R is to stretch the P+ collector layer.…”

Section: IImentioning

confidence: 99%

“…Lateral insulated gate bipolar transistors may be promising candidates for power ICs because of the high input impedance of the metal-oxide semiconductor (MOS) gate and the conductivity modulation effect of the bipolar transistor [1][2]. However, the conductivity modulation effect causes a slow turn-off time.…”

Section: Introductionmentioning

confidence: 99%

A snap-back suppressed shorted-anode lateral trench insulated gate bipolar transistor (LTIGBT) with insulated trench collector

Chun

et al. 2011

2011 IEEE International Symposium on Industrial Electronics

View full text Add to dashboard Cite

A shorted anode insulated gate bipolar transistor (SA-LIGBT) has a negative differential resistance (NDR) region that causes undesirable operation of the device and increases the onstate voltage drop. We propose a lateral trench gate IGBT (LTIGBT) structure that has an insulated trench collector. The insulated trench collector can be formed when the trench gate is formed. The insulated trench collector reduces the NDR region without stretching the width of the device. The proposed SA-LTIGBT has a lower snap-back voltage than conventional SA-LTIGBT. The breakdown voltage and turn-off time do not degenerate, in contrast to a conventional SA-LTIGBT. We analyzed the proposed device using two-dimensional numerical simulation.I.

show abstract

“…e operating voltage has dropped below 1 V, but high-voltage devices in power management, display drive, digital media, and mixed digital chips are still necessary [1][2][3][4][5], among which LDMOS (Laterally Di used MOSFET) device is a high-voltage device used in integrated circuits, and its performance and stability have been widely concerned as its important parameter indicators. At present, many foreign chip manufacturers have set up special departments to extract model parameters.…”

Section: Introductionmentioning

confidence: 99%

Design of LDMOS Device Modeling Method Based on Neural Network

Liu¹,

Wen

Zhang

et al. 2022

Computational Intelligence and Neuroscience

View full text Add to dashboard Cite

The rapid development of power semiconductor devices is helping to realize a low-carbon society and provide a better life for everyone. Power semiconductors not only are used in many large-scale industrial control fields such as power transmission and control in power grids, rail transit traction systems, and defense weapons and equipment, but also play a vital role in daily equipment such as home appliances, medical electronics, and electronic communications; all devices such as power steering in cars, battery chargers, cell phones, and microwave ovens utilize power electronics. This research mainly focuses on the high-voltage LDMOS device model and its implementation. Based on the in-depth study of the structure and physical mechanism of high-voltage LDMOS devices, with the help of BSIM4 core model, which is now very mature and widely used in industry, the drift region of high-voltage LDMOS is mainly modeled, and the drift region of LDMOS is modeled as a variable resistance controlled by voltage. Finally, Verilog-A language and neural network method are used to establish a compact model of LDMOS. The improved model is applied to LDMOS and can better fit the output characteristics with self-heating effect.

show abstract

Power integrated circuits—A brief overview

Cited by 30 publications

References 11 publications

Optimization of Power Plant for Telecom Sector Based on Embedded System

Optimization of Power Plant for Telecom Sector Based on Embedded System

A snap-back suppressed shorted-anode lateral trench insulated gate bipolar transistor (LTIGBT) with insulated trench collector

Design of LDMOS Device Modeling Method Based on Neural Network

Contact Info

Product

Resources

About