A snap-back suppressed shorted-anode lateral trench insulated gate bipolar transistor (LTIGBT) with insulated trench collector

Oh, Juhyun; Chun, Dae Hwan; Oh, Reum; Kim, Hyun Soo

doi:10.1109/isie.2011.5984358

Cited by 14 publications

(6 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Insulated trench complex 140 1.96 collector SA-LTIGBT [9] (etching) the proposed LIGBT is decreased by 61% compared to that of the conventional LIGBT. The bypass path around the pD anode provides the fast extraction for electron carriers during the turnoff process.…”

Section: Resultsmentioning

confidence: 98%

“…A very long anode geometry is thus required to suppress the snapback and it would increase the device area considerably [6]. Nowadays, various approaches have been reported to achieve fast switching speed without increasing device cell pitch, such as NPN controlled LIGBT [7], 3-D n-region-controlled anode LIGBT [8], and insulated trench collector SA-LTIGBT [9], etc. But these structures caused increasing manufacturing process complexity: triple diffusion process or additional etching process.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Bypass anode lateral IGBT on SOI for snapback suppression

Zhang

2014

IEICE Electron. Express

View full text Add to dashboard Cite

In this letter a novel lateral insulated gate bipolar transistor with a three dimensional (3D) bypass anode design on silicon-oninsulator (SOI) is proposed and discussed. The 3D bypass anode concept makes it more effectively not only suppress the snapback effect in conducting state, but also improve the switching speed as a fast electron extraction path during turnoff without wasting the anode area. Numerical simulation results show that the proposed LIGBT structure has a 1.12 V forward voltage drop and 400 ns turnoff time at current density of 100 A/cm 2 . The proposed LIGBT saves the cell area by above 30% compared with the conventional no snapback SA-LIGBT and has about 61% reduction in turnoff time compared with the conventional LIGBT, respectively. Mostly, the proposed LIGBT can be fabricated by the conventional SOI smart power IC process without an additional process step and mask.

show abstract

Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Bypass anode lateral IGBT on SOI for snapback suppression

Zhang

2014

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…Due to the introduction of extra holes by the composite BJT, the proposed GCBFET has similar slow switching speed as IGBT. The blocking and switching characteristics of proposed GCBFETs in this paper and conventional IGBTs in [17][18][19] are listed in table 2. As the bipolar device, the T off of proposed GCBFET is mainly used to the process of overcoming the reverse hole current, while the T off of conventional IGBT is mainly used for the recombination process of electrons and holes.…”

Section: Resultsmentioning

confidence: 99%

Novel gate-controlled bipolar composite field effect transistor with large on-state current

Duan¹,

Sun²,

Dong³

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Novel gate-controlled bipolar composite field effect transistors (GCBFET) based on vertical MOSFETs are proposed and investigated in this paper for the first time, named VD-GCBFET and U-GCBFET, respectively, which feature the base-gate short connection mode instead of the conventional base-source short connection mode. When the devices are turned on, the composite bipolar junction transistor (BJT) provides an additional holes injection path, which is conducive to obtaining larger forward on-state current. Two conductive paths provided by the composite BJT and MOS structure not only improve the integration degree, but also greatly increase the forward on-state current while the breakdown mechanism remains unchanged. The simulation results show that, with the same structural parameters, the proposed GCBFETs have the same breakdown voltage and much lower threshold voltage compared with the corresponding vertical MOSFETs. Meanwhile, the proposed GCBFETs gain much larger forward on-state current which is over two orders of magnitude higher than that of the corresponding vertical MOSFETs. Moreover, due to the introduction of extra holes by the composite BJT, the proposed GCBFET has similar slow switching speed as IGBT.

show abstract

“…The proposed LIGBT can be applied to high-voltage monolithic IC applications for its low power consumption and device size. The blocking and switching characteristics of proposed SSBO LIGBT in this Letter and other structures in [13][14][15] are listed in Table 2.…”

Section: Device Structure and Descriptionmentioning

confidence: 99%

Novel SOI LIGBT with fast‐switching by the electric field modulation

Sun

Duan

Yang

2020

Micro & Nano Letters

View full text Add to dashboard Cite

A novel silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT) is proposed and investigated in this work. The device features a single-step buried oxide (SSBO) structure formed on the silicon-on-insulator (SOI) layer. The SSBO structure introduces a high electric field peak by the electric field modulation to modulate electric field distributions. Therefore, the proposed SOI LIGBT can maintain the high breakdown voltage (BV) while shortening the length of drift region, which achieves the decreased total number of stored carriers during the turn-on and fast depletion of drift region during the turn-off. As the simulation results show, under the same BV of 98 V, the drift region length of the proposed SOI LIGBT is 4.4 μm, which is much shorter than that of the conventional SOI LIGBT of 12.0 μm. So the turn-off time of SSBO SOI LIGBT is 76.6% lower than that of the conventional SOI LIGBT at the same forward voltage drop of 1.72 V. It shows that the tradeoff between forward voltage drop and turn-off time can be significantly improved.

show abstract

A snap-back suppressed shorted-anode lateral trench insulated gate bipolar transistor (LTIGBT) with insulated trench collector

Cited by 14 publications

References 7 publications

Bypass anode lateral IGBT on SOI for snapback suppression

Bypass anode lateral IGBT on SOI for snapback suppression

Novel gate-controlled bipolar composite field effect transistor with large on-state current

Novel SOI LIGBT with fast‐switching by the electric field modulation

Contact Info

Product

Resources

About