2005
DOI: 10.1016/j.jcrysgro.2005.04.045
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Post-annealing of Al-doped ZnO films in hydrogen atmosphere

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Cited by 191 publications
(80 citation statements)
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References 32 publications
(44 reference statements)
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“…34 According to Van de Walle, 34 hydrogen in ZnO appears exclusively in the positive charge state, i.e., it always acts as a donor causing an increase in carrier concentration. Therefore, it tends to reduce the energy barriers at the grain boundaries, thus being the main reason for the improved electrical properties, 35 in agreement with Ruske et al…”
Section: Resultssupporting
confidence: 86%
“…34 According to Van de Walle, 34 hydrogen in ZnO appears exclusively in the positive charge state, i.e., it always acts as a donor causing an increase in carrier concentration. Therefore, it tends to reduce the energy barriers at the grain boundaries, thus being the main reason for the improved electrical properties, 35 in agreement with Ruske et al…”
Section: Resultssupporting
confidence: 86%
“…This is an evidence for creation of internal compressive micro stress. Such case was also observed in ZnO annealed in hydrogen atom sphere [14]. It is known that more oxygen content is introduced into the sample.…”
Section: Structural and Compositionalsupporting
confidence: 52%
“…A few works have suggested that the enhancement in conductivity may be due to desorption of negatively charged oxygen species from the grain boundary surfaces. [15][16][17] We show in this work that hydrogen passivation of Zn vacancy related defects may be also behind the enhancement in conductivity in the studied films as evident from PAS measurements. Hydrogen passivation of defects has been recognized to be the major factor in the successful development of complementary metal-oxide-semiconductor devices.…”
Section: Introductionsupporting
confidence: 53%
“…14 The Doppler broadening of positron annihilation (DBPA) measurements presented in this work reveal strong passivation of Zn vacancy related defects by hydrogen that immensely alters the electrical conductivity of the films. Although the enhancement in the conductivity of ZnO by hydrogen anneals has been reported for films grown by different methods, 15 the reason behind it is not understood. A few works have suggested that the enhancement in conductivity may be due to desorption of negatively charged oxygen species from the grain boundary surfaces.…”
Section: Introductionmentioning
confidence: 99%