Post-annealing of Al-doped ZnO films in hydrogen atmosphere

Oh, Byeong Yun; Jeong, Min Chang; Kim, Doo Soo; Lee, Woong; Myoung, Jae Min

doi:10.1016/j.jcrysgro.2005.04.045

Cited by 191 publications

(80 citation statements)

References 32 publications

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“…34 According to Van de Walle, 34 hydrogen in ZnO appears exclusively in the positive charge state, i.e., it always acts as a donor causing an increase in carrier concentration. Therefore, it tends to reduce the energy barriers at the grain boundaries, thus being the main reason for the improved electrical properties, 35 in agreement with Ruske et al…”

Section: Resultssupporting

confidence: 86%

Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

Ponomarev

Sharma

Verheijen

et al. 2012

Journal of Applied Physics

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Improved conductivity of aluminum-doped Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Related ArticlesHigh Si and Ge n-type doping of GaN doping -Limits and impact on stress Appl. Phys. Lett. 100, 122104 (2012) Generalized conductivity model for polar semiconductors at terahertz frequencies Appl. Phys. Lett. 100, 122103 (2012) Numerical analysis of formation properties of a high-field dipole domain for submicron GaAs field-effect transistor devices J. Appl. Phys. 111, 054513 (2012) Thermoelectric properties of Zn-doped GaSb J. Appl. Phys. 111, 043704 (2012) Efficient room-temperature spin detector based on GaNAs

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Section: Resultssupporting

confidence: 86%

Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

Ponomarev

Sharma

Verheijen

et al. 2012

Journal of Applied Physics

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“…This is an evidence for creation of internal compressive micro stress. Such case was also observed in ZnO annealed in hydrogen atom sphere [14]. It is known that more oxygen content is introduced into the sample.…”

Section: Structural and Compositionalsupporting

confidence: 52%

Synthesis and Characterization of Ni Doped ZnO Nanoparticles

Bhuiyan¹,

Rahman²

2014

IJEM

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This paper discerns key ideas and themes of the possibility of growing Ni doped ZnO nanoparticles by electrochemical method. The purpose is to study the growth mechanism and to optimize the parameters of this method. Upon successful synthesizing the samples, they were characterized using various techniques. XRD, SEM, FTIR, photoluminescence spectroscopy together with the measured optical parameters obtained from UV-VIS absorption testing were analyzed. The X-ray diffraction (XRD) was measured by using a Bruker D8 Advance X-ray diffractometer with CuK α radiation. The surface morphology was investigated using an 'EVO LS 15' scanning electron microscope. The FTIR absorption spectra were recorded on a Perkin-Elmer GX FTIR system. The PL spectra were collected on a Jobin Yvon-Horiba Triax 190 spectrometer with a spectral resolution of 0.3 nm. UV-VIS absorption spectrum was recorded by using a UV-VIS spectrophotometer in the photon wavelength range between 300 and 600 nm. XRD pattern reveals that the polycrystalline of hexagonal wurtzite structure and the average size of the particles were estimated to be approximately 61 nm, which conform the nanoparticle. The FTIR result shows the stretching vibration of the Zn-O bond in Ni doped ZnO nanoparticles. There is a green emission peak centered at about 384 nm in the PL behavior. The band edge is shifted to the lower energy side of the Ni doped ZnO nanoparticle. Analyzing the results of various types of characterizations, it has been assessed that Ni doped ZnO nanoparticles was successfully synthesized.

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“…A few works have suggested that the enhancement in conductivity may be due to desorption of negatively charged oxygen species from the grain boundary surfaces. [15][16][17] We show in this work that hydrogen passivation of Zn vacancy related defects may be also behind the enhancement in conductivity in the studied films as evident from PAS measurements. Hydrogen passivation of defects has been recognized to be the major factor in the successful development of complementary metal-oxide-semiconductor devices.…”

Section: Introductionsupporting

confidence: 53%

“…14 The Doppler broadening of positron annihilation (DBPA) measurements presented in this work reveal strong passivation of Zn vacancy related defects by hydrogen that immensely alters the electrical conductivity of the films. Although the enhancement in the conductivity of ZnO by hydrogen anneals has been reported for films grown by different methods, 15 the reason behind it is not understood. A few works have suggested that the enhancement in conductivity may be due to desorption of negatively charged oxygen species from the grain boundary surfaces.…”

Section: Introductionmentioning

confidence: 99%

Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

et al. 2016

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Undoped and Ga-and Al-doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM), optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however, annealing in hydrogen or zinc environment induced significant conductivity (∼10 −2 Ω.cm) in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal-oxide-semiconductor (CMOS) devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties. © 2016 Author(s)

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Post-annealing of Al-doped ZnO films in hydrogen atmosphere

Cited by 191 publications

References 32 publications

Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

Synthesis and Characterization of Ni Doped ZnO Nanoparticles

Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

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