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Straight and well‐aligned GaN nanorods have been obtained by horizontal hydride vapor phase epitaxy (HVPE) at a relatively low temperature (∼ 480 °C). This catalyst‐ and template‐ independent method involves the controllable growth of GaN nanorods on a sapphire substrate, with the rods preferentially oriented along the crystal c‐axis. The Figure shows a cross‐sectional SEM image of the GaN nanorods.

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We report on the anisotropic carrier transport properties of semipolar (112¯2) GaN films with low defect density. We utilized the asymmetric lateral epitaxy to obtain various semipolar (112¯2) GaN films having significantly reduced partial dislocations and basal-plane stacking faults (BPSFs). The directionally dependent carrier transport was observed with the lower sheet resistances (Rsh) along the [11¯00] direction. The Rsh ratios of semipolar (112¯2) GaN films were found to be relatively smaller than those of nonpolar a-plane GaN films, possibly due to low BPSF density and the reduced in-plane electric field induced by BPSF along the [112¯3] direction at wurtzite domain boundaries.

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