Polytype transitions in ion implanted silicon carbide

Pezoldt, Joerg; Kalnin, A. A.; Moskwina, D.R.; Savelyey, W.D.

doi:10.1016/0168-583x(93)90714-h

Cited by 31 publications

(22 citation statements)

References 9 publications

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“…They also observed voids in the recrystallized polycrystalline SiC layer. This thermal recrystallization process of aSiC produced by ion bombardment of 6H-SiC consisting of columnar epitaxial growth of 6H-SiC from the substrate and the formation of 3C-SiC grains has been reported using TEM studies [200 -203], by XRD [204] and by RHEED (reflection high energy electron diffraction) measurements [205,206]. Similar results were found when using 4H-SiC [207,208].…”

Section: Annealing Of Radiation Damagesupporting

confidence: 73%

Diffusion of fission products and radiation damage in SiC

Malherbe

2013

J. Phys. D: Appl. Phys.

105

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A major problem with most of the present nuclear reactors is their safety in terms of the release of radioactivity into the environment during accidents. In some of the future nuclear reactor designs, i.e. Generation IV reactors, the fuel is in the form of coated spherical particles, i.e. TRISO (acronym for Triple Coated Isotropic) particles. The main function of these coating layers is to act as diffusion barriers for radioactive fission products, thereby keeping these fission products within the fuel particles, even under accident conditions. The most important coating layer is composed of polycrystalline 3C-SiC. This paper reviews the diffusion of the important fission products (silver, caesium, iodine and strontium) in SiC. Because radiation damage can induce and enhance diffusion, the paper also briefly reviews damage created by energetic neutrons and ions at elevated temperatures, i.e. the temperatures at which the modern reactors will operate, and the annealing of the damage. The interaction between SiC and some fission products (such as Pd and I) is also briefly discussed. As shown, one of the key advantages of SiC is its radiation hardness at elevated temperatures, i.e. SiC is not amorphized by neutron or bombardment at substrate temperatures above 350°C. Based on the diffusion coefficients of the fission products considered, the review shows that at the normal operating temperatures of these new reactors (i.e. less than 950°C) the SiC coating layer is a good diffusion barrier for these fission products. However, at higher temperatures the design of the coated particles needs to be adapted, possibly by adding a thin layer of ZrC.

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Section: Annealing Of Radiation Damagesupporting

confidence: 73%

Diffusion of fission products and radiation damage in SiC

Malherbe

2013

J. Phys. D: Appl. Phys.

105

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“…In fact, for SiC, the formation of the cubic phase inside the hexagonal phase during postimplantation annealing was investigated. Pezoldt et al reported the formation of 3C‐SiC clusters after annealing of 6H‐SiC (implanted with Si) . They concluded that lattice rearrangement such as the generation of partial dislocations and stacking faults can lead to the formation of cubic phase SiC.…”

Section: Resultsmentioning

confidence: 99%

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Wang

Huynh

Liao

et al. 2020

Physica Status Solidi (b)

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The evolution of defects due to high‐pressure annealing of magnesium ion‐implanted epitaxial GaN grown on high‐quality GaN substrates is investigated. Changes in the implant‐induced strain are quantified as a function of annealing temperature and time. After annealing at 1300 °C for 10 min, the implant‐induced strain is fully relieved and accompanied by the presence of extended defects such as basal plane stacking faults and prismatic loops. Approximately one‐third of the original implant‐induced strain remains after annealing at 700 °C, and 5% of the original strain remains at 1000 °C for 100 min. In all cases, nearly all of the recovered strain occurs within first few minutes of annealing. A prominent increase in the asymmetric (10true1¯4) triple axis X‐ray rocking curve full width at 0.01 maximum (FW0.01M) is observed after annealing at 1300 °C for 10 min. After annealing at 1300 °C for 100 min, a subsequent decrease in FW0.01M is correlated with a reduction of the extended defect density from 4 × 108 to 3 × 107 cm−2, determined through transmission electron microscope (TEM) measurements. Further reduction in the density of the extended defects by optimizing annealing temperature and time is expected to improve the performance of GaN‐based vertical power devices.

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“…To activate the implanted impurities, i.e., their migration in substitutional electrically active sites of the SiC target, high annealing temperatures are necessary, typically in the 1600-1800°C range and even more. To recrystallize the original hexagonal SiC structure ͑4H and 6H polytypes͒ high heating ramps are needed to obtain a solid phase epitaxy recrystallization from the amorphouscrystalline interface 7,8 and to avoid cubic polytype formation that is the natural structure in which the amorphous SiC crystallizes. We may have an etching of the surface with a subsequent loss of the implanted dopants or a deposited layer depending of the sample environment in the annealing furnace.…”

Section: Introductionmentioning

confidence: 99%

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

Lazar

Raynaud

Planson

et al. 2003

Journal of Applied Physics

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Articles you may be interested inA view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy Epilayers of 6H and 4H-SiC were Al implanted with various doses to form p-type layers after a postimplantation annealing performed at 1700°C/30 min. Rutherford backscattering spectrometry in the channeling mode analyses carried out before and after annealing show virgin nonimplanted equivalent spectra if the implanted layers are not amorphized. The amorphous layers are recrystallized after annealing with a residual damage level of the lattice relative to the quantity of the dopant implanted. Secondary ion mass spectrometry measurements performed on the implanted samples before and after annealing illustrate a good superposition of the profiles obtained before and after the annealing on nonamorphized samples. Dopant redistribution occurs after annealing, only on amorphized layers, with an intensity that increases with the implanted dose. Deduced from sheet resistance measurements, the dopant activation increases with the implanted dose. Activation of 80%-90% is obtained from capacitance-voltage measurements on samples implanted with a 10 13 cm Ϫ2 total dose.

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Polytype transitions in ion implanted silicon carbide

Cited by 31 publications

References 9 publications

Diffusion of fission products and radiation damage in SiC

Diffusion of fission products and radiation damage in SiC

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

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