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Results are given from the investigation on the Si-Sc-C system, which is of interest with respect t o the growth of cr-Sic single crystals. Data on the crystallization rate in the 1500 t o 1900 "C temperature range are given. The optimal solvent compositions for growing a perfect S i c layer are determined. A possible mechanism for the formation and transport of SIC in the liquid phase is proposed. E s werden die Ergebnisse einer Untersuchung am Si-Sc-C-System mitgeteilt, das beziiglich des Wachstums von a-Sic-Einkristallen von Interesse ist. 7Yerte der Kristallisationsgeschwindigkeit im Temperaturbereich von 1500 bis 1900 "C merden angegeben. Die optimalen Losungsbedingungen fur das Wachstum von perfekten Sic-Schichten werden bestimmt. Ein moglicher Mechanismus fur die Bildung und den Transport von Sic in der flussigen Phase wird vorgeschlagen.

In the paper which is divided into three parts the liquid phase epitaxy of Sic by temperature gradient zone melting with the solvent Si-Tb is discussed. In the first part the solubility of Sic a t different initial compositions of the Si-Tb solvent is studied in the temperature range 2000-2500 K.