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Ion milling, as a tool for “stirring” defects in HgCdTe by injecting high concentration of interstitial mercury atoms, was used for studying films grown by liquid phase epitaxy (LPE) on CdZnTe substrates. The films appeared to have very low residual donor concentration (∼1014 cm−3), yet, similar to the material grown by molecular beam epitaxy, contained Te-related neutral defects, which the milling activated electrically. It is shown that ion milling has a stronger effect on HgCdTe defect structure than thermal treatment, and yet eventually brings the material to an “equilibrium” state with defect concentration lower than that after low-temperature annealing.

Abstract. We construct a new set of isospin-nonconserving (INC) shell-model Hamiltonians and apply it (i) to study the isobaric-mass multiplet equation (IMME) beyond a quadratic form in the A = 35, 3/2 + quartet, (ii) to compute the isospin mixing corrections to superallowed Fermi branch of 1 + → 1 + β decay of 32 Cl, and (iii) to obtain the isospin-forbidden branching ratios of β-delayed proton emission from 25 Si.

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Raman scattering spectra of CdxHg1–xTe/Cd1‐yZnyTe epitaxial structures were studied. Experimental results have been obtained by micromode method over cleaved surface of the sample formed normally to the [111] direction immediately prior to measurement procedure. Raman spectra obtained were shown to be dominated by vibrational modes induced by crystal defects. Special attention was paid to the possibility of obtaining information on the presence of structural defects in cation sublattice and tellurium nanoprecipitates. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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