Polystyrene negative resist for high-resolution electron beam lithography

Ma, Siqi; Con, Celal; Yavuz, Mustafa; Cui, Bo

doi:10.1186/1556-276x-6-446

Cited by 52 publications

(54 citation statements)

References 23 publications

(31 reference statements)

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“…This plasma chemistry is a passivation etching mixed‐mode recipe that etches slower than the Bosch process but produces smooth and straight sidewalls. In previously published papers, there has been a lot of work to address the topic regarding micro‐/nanopillars using Bosch/pseudo‐Bosch process . Although the pseudo‐Bosch etching process has been widely used at the nanoscale, details on pseudo‐Bosch etching are scarce.…”

Section: Resultsmentioning

confidence: 99%

“…This latter allows the accurate fabrication of sub‐30 nm features. Many different electron beam resists, negative or positive tone, are available in the market . The choice of which e‐beam resist (i.e., resolution, dimension, and thickness) depends on the process (lift‐off or direct mask transfer) used (as mask transfer: their selectivity and profile) is very important.…”

Section: Resultsmentioning

confidence: 99%

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Micro‐/Nanopillars for Micro‐ and Nanotechnologies Using Inductively Coupled Plasmas

Herth

Edmond

Bouville

et al. 2019

Physica Status Solidi (a)

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Herein, the plasma etching mask transfer of the resistance of e‐beam resists, both negative and positive, as well as nanoparticle masks and hard masks are investigated. Various microscale and nanoscale features are exposed under plasma etching chemistries and are examined through both Bosch and pseudo‐Bosch processes using an inductive‐coupled plasma‐deep reactive ion etching (ICP‐DRIE) system. The selection of masks transfer proposed in this work provides better flexibility and cost‐effective processing. The etch profile depending on plasma etching process and feature size is studied and highlighted. In particular, nanopillars are etched to a length of 10 μm and a diameter of 280 nm with a good aspect ratio (>30) yielding a selectivity of better than 100:1 and a satisfactory vertical profile.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Micro‐/Nanopillars for Micro‐ and Nanotechnologies Using Inductively Coupled Plasmas

Herth

Edmond

Bouville

et al. 2019

Physica Status Solidi (a)

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“…HSQ’s main attraction is its extremely high resolution (<10 nm); however, its sensitivity is usually an order lower than that of PMMA. Other negative-tone resists such as AZ nLOF 2020 (Clariant Corporation, Muttenz, Switzerland) [14] and high molecular weight polystyrene (PS) [15] have sensitivities a fraction of that of PMMA; however, their AR performance is limited to 4:1 to 5:1 at 100 keV for AZ nLOF 2020 [14] and to less than 2:1 at 20 keV for PS [15,16]. …”

Section: Introductionmentioning

confidence: 99%

SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography

2013

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A detailed process characterization of SML electron beam resist for high-aspect-ratio nanopatterning at high sensitivity is presented. SML contrast curves were generated for methyl isobutyl ketone (MIBK), MIBK/isopropyl alcohol (IPA) (1:3), IPA/water (7:3), n-amyl acetate, xylene, and xylene/methanol (3:1) developers. Using IPA/water developer, the sensitivity of SML was improved considerably and found to be comparable to benchmark polymethylmethacrylate (PMMA) resist without affecting the aspect ratio performance. Employing 30-keV exposures and ultrasonic IPA/water development, an aspect ratio of 9:1 in 50-nm half-pitch dense grating patterns was achieved representing a greater than two times improvement over PMMA. Through demonstration of 25-nm lift-off features, the pattern transfer performance of SML is also addressed.

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“…It is known that UV [25,26,27] and e-beam exposure [17,28] cause cross-linking in polystyrene, increasing the glass transition and chemical resistance [17,18]. E-beam cross-linking was chosen here over UV for a couple of reasons: electron beams are easily controlled for patterning without masks, and their penetration into the polymer layers is stronger that that of UV.…”

Section: Controlling the Chemical Resistance Of A Polystyrene Colloidmentioning

confidence: 99%

Intregrating metallic wiring with three-dimensional polystyrene colloidal crystals using electron-beam lithography and three-dimensional laser lithography

Tian¹,

Isotalo²,

Konttinen³

et al. 2017

J. Phys. D: Appl. Phys.

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Abstract. We demonstrate a method to fabricate narrow, down to a few micron wide metallic leads on top of a three-dimensional colloidal crystal self-assembled from polystyrene (PS) nanospheres of diameter 260 nm, using electron-beam lithography. This fabrication is not straightforward due to the fact that PS nanospheres cannot usually survive the harsh chemical treatments required in the development and lift-off steps of electron-beam lithography. We solve this problem by increasing the chemical resistance of the PS nanospheres using an additional electron-beam irradiation step, which allows the spheres to retain their shape and their self-assembled structure, even after baking to a temperature of 160 degrees C, the exposure to the resist developer and the exposure to acetone, all of which are required for the electron-beam lithography step. Moreover, we show that by depositing an aluminum oxide capping layer on top of the colloidal crystal after the e-beam irradiation, the surface is smooth enough so that continuous metal wiring can be deposited by the electron-beam lithography. Finally, we also demonstrate a way to self-assemble PS colloidal crystals into a microscale container, which was fabricated using direct-write three-dimensional laser-lithography. Metallic wiring was also successfully integrated with the combination of a container structure and a PS colloidal crystal. Our goal is to make a device for studies of thermal transport in 3D phononic crystals, but other phononic or photonic crystal applications could also be envisioned.

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Polystyrene negative resist for high-resolution electron beam lithography

Cited by 52 publications

References 23 publications

Micro‐/Nanopillars for Micro‐ and Nanotechnologies Using Inductively Coupled Plasmas

Micro‐/Nanopillars for Micro‐ and Nanotechnologies Using Inductively Coupled Plasmas

SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography

Intregrating metallic wiring with three-dimensional polystyrene colloidal crystals using electron-beam lithography and three-dimensional laser lithography

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