SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography

Mohammad, Mohammad Ali; Dew, S. K.; Stepanova, Maria

doi:10.1186/1556-276x-8-139

Cited by 14 publications

(3 citation statements)

References 22 publications

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“…SML is also an organic, positive toned EBL resist. Initial works on this resist involve lithographic comparisons with PMMA and ZEP resists. , It was found in a study that SML shows the best contrast-sensitivity trade-off with the 7:3 IPA:DI water developer, like PMMA . Contrast curves of 300 nm thick SML resist obtained at 10 kV voltage, in comparison with those of PMMA and ZEP resists, are shown in Figure .…”

Section: Ebl Resist Familiesmentioning

confidence: 99%

New Generation Electron Beam Resists: A Review

2017

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The semiconductor industry has already entered the sub-10 nm region, which has led to the development of cutting-edge fabrication tools. However, there are other factors that hinder the best outcome of these tools, such as the substrate and resist materials, pre-and postfabrication processes, etc. Among the lithography techniques, electron beam lithography (EBL) is the prime choice when a job requires dimensions lower than 10−20 nm, since it can easily achieve such critical dimensions in reasonable time and effort. When obtaining pattern features in single nanometer regime, the resist material properties play an important role in determining the size. With this agenda in mind, many resists have been developed over the years suitable for attaining required resolution in lesser EBL writing time. This review article addresses the recent advancements made in EBL resists technology. It first describes the different lithography processes briefly and then progresses on to the parameters affecting the EBL fabrications processes. EBL resists are then bifurcated into their "family types" depending on their chemical composition. Each family describes one or two examples of the new resists, and their chemical formulation, contrast-sensitivity values, and highest resolution are described. The review finally gives an account of various alternate next-generation lithography techniques, promising dimensions in the nanometer range.

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Section: Ebl Resist Familiesmentioning

confidence: 99%

New Generation Electron Beam Resists: A Review

2017

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“…The main advantage of this method relies on the maskless fabrication of sub-20 nm patterns in the horizontal plane [ 63 ] and of sub-10 nm patterns in the vertical plane [ 64 ] by employing a computer software that guides a finely focused beam of electrons over the patternable surface. Nonetheless, the best contrast and sensitivity of the material has to be considered when choosing the appropriate resist for high-aspect ratio patterns [ 65 ] and when aiming at sub-20 nm resolution on both positive and negative tones resists [ 66 ]. Sometimes, depending on the resist type, EBL can also induce unwanted competing chemistries including surface-grafting or cross-linking or changes in chemical functionality [ 67 ].…”

Section: Top–down Lithographic Methodologiesmentioning

confidence: 99%

Multifunctional Structured Platforms: From Patterning of Polymer-Based Films to Their Subsequent Filling with Various Nanomaterials

Handrea-Dragan

Botiz

2021

Polymers

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There is an astonishing number of optoelectronic, photonic, biological, sensing, or storage media devices, just to name a few, that rely on a variety of extraordinary periodic surface relief miniaturized patterns fabricated on polymer-covered rigid or flexible substrates. Even more extraordinary is that these surface relief patterns can be further filled, in a more or less ordered fashion, with various functional nanomaterials and thus can lead to the realization of more complex structured architectures. These architectures can serve as multifunctional platforms for the design and the development of a multitude of novel, better performing nanotechnological applications. In this work, we aim to provide an extensive overview on how multifunctional structured platforms can be fabricated by outlining not only the main polymer patterning methodologies but also by emphasizing various deposition methods that can guide different structures of functional nanomaterials into periodic surface relief patterns. Our aim is to provide the readers with a toolbox of the most suitable patterning and deposition methodologies that could be easily identified and further combined when the fabrication of novel structured platforms exhibiting interesting properties is targeted.

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“…According to the procedures of industrial production the phosphorus doped silicon wafers were metallized by screen printer using silver and aluminium paste to form ohmic contacts between silver/aluminum layer and the silicon wafer through rapid thermal annealing. A main difference between the PERC and the traditional full-aluminium back surface field silicon solar cell is rear passivation of wafers [11]. Considerable efforts have been made in order to improve wafer surface passivation.…”

Section: Introductionmentioning

confidence: 99%

Electro-analytical comparison of commercial mono-crystalline silicon and PERC solar cells to maximize performance

et al. 2020

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In this article detailed electro-analytical comparison of the commercial mono-crystalline silicon and passivated emitter and rear contact (PERC) solar cells has been presented that can help in device optimization during manufacturing process. This study indicates fundamental differences between these two technologies in terms of the series resistance, shunt resistance and junction quality including ideality factor and doping concentration. Impedance spectroscopic analysis revealed a value of series resistance of 1 Ω for both the devices with no substantial difference, which suggest that employed metal contacts and base layer conductivity in both the solar cells have comparable electrical characteristics. The shunt resistance of 190 Ω cm2 and 98 Ω cm2 have been obtained for PERC and reference solar cells. The ideality factors of 1.9 and 2.2 have been obtained for PERC and reference solar cells, which indicate a better junction quality in PERC solar cells. From Mott-Schottky analysis a value of 0.65 V built-in potential has been obtained for both the solar cells. A doping density of 2.31 × 1016 cm−3 and 4.494 × 1016 cm−3 has been obtained for reference and PERC solar cells. This study intends to provide a basis for development of better optimization strategies to improve the performance of solar cells.

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SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography

Cited by 14 publications

References 22 publications

New Generation Electron Beam Resists: A Review

New Generation Electron Beam Resists: A Review

Multifunctional Structured Platforms: From Patterning of Polymer-Based Films to Their Subsequent Filling with Various Nanomaterials

Electro-analytical comparison of commercial mono-crystalline silicon and PERC solar cells to maximize performance

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