Pressure sensors are a key component in electronic skin (e-skin) sensing systems. Most reported resistive pressure sensors have a high sensitivity at low pressures (<5 kPa) to enable ultra-sensitive detection. However, the sensitivity drops significantly at high pressures (>5 kPa), which is inadequate for practical applications. For example, actions like a gentle touch and object manipulation have pressures below 10 kPa, and 10–100 kPa, respectively. Maintaining a high sensitivity in a wide pressure range is in great demand. Here, a flexible, wide range and ultra-sensitive resistive pressure sensor with a foam-like structure based on laser-scribed graphene (LSG) is demonstrated. Benefitting from the large spacing between graphene layers and the unique v-shaped microstructure of the LSG, the sensitivity of the pressure sensor is as high as 0.96 kPa−1 in a wide pressure range (0 ~ 50 kPa). Considering both sensitivity and pressure sensing range, the pressure sensor developed in this work is the best among all reported pressure sensors to date. A model of the LSG pressure sensor is also established, which agrees well with the experimental results. This work indicates that laser scribed flexible graphene pressure sensors could be widely used for artificial e-skin, medical-sensing, bio-sensing and many other areas.

Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5–20 cm2/V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

The human hearing range is from 20 Hz to 20 kHz. However, many animals can hear much higher sound frequencies. Dolphins, especially, have a hearing range up to 300 kHz. To our knowledge, there is no data of a reported wide-band sound frequency earphone to satisfy both humans and animals. Here, we show that graphene earphones, packaged into commercial earphone casings can play sounds ranging from 100 Hz to 50 kHz. By using a one-step laser scribing technology, wafer-scale flexible graphene earphones can be obtained in 25 min. Compared with a normal commercial earphone, the graphene earphone has a wider frequency response (100 Hz to 50 kHz) and a three times lower fluctuation (±10 dB). A nonlinear effect exists in the graphene-generated sound frequency spectrum. This effect could be explained by the DC bias added to the input sine waves which may induce higher harmonics. Our numerical calculations show that the sound frequency emitted by graphene could reach up to 1 MHz. In addition, we have demonstrated that a dog wearing a graphene earphone could also be trained and controlled by 35 kHz sound waves. Our results show that graphene could be widely used to produce earphones for both humans and animals.

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The continuous tuning of the emission spectrum of a single light-emitting diode (LED) by an external electrical bias is of great technological significance as a crucial property in high-quality displays, yet this capability has not been demonstrated in existing LEDs. Graphene, a tunable optical platform, is a promising medium to achieve this goal. Here we demonstrate a bright spectrally tunable electroluminescence from blue (∼450 nm) to red (∼750 nm) at the graphene oxide/reduced-graphene oxide interface. We explain the electroluminescence results from the recombination of Poole–Frenkel emission ionized electrons at the localized energy levels arising from semi-reduced graphene oxide, and holes from the top of the π band. Tuning of the emission wavelength is achieved by gate modulation of the participating localized energy levels. Our demonstration of current-driven tunable LEDs not only represents a method for emission wavelength tuning but also may find applications in high-quality displays.

Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm(2) can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfOx/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.

Piezoelectric materials used in the development of nanoscale mechanical sensors, actuators and energy harvesters have received much attention. More recently, devices made of graphene are of particular interest because of graphene's intriguing electronic and mechanical properties. Intrinsic graphene has long been considered devoid of the piezoelectric effect, although flexoelectricity has been exploited to demonstrate piezoelectricity in functionalized graphene and graphene nanoribbons. The perceived lack of this property has restricted graphene's use in nanoelectromechanical systems (NEMS) for electromechanical coupling purposes. Here an unprecedented two-dimensional (2D) piezoelectric effect on a strained/unstrained graphene junction is reported. In stark contrast to the bulk piezoelectric effect that results from the occurrence of electric dipole moments in solids, the 2D piezoelectric effect arises from the charge transfer along a work function gradient introduced by the biaxial-strainengineered band structure. The observed effect, termed the band-piezoelectric effect, exhibits an enormous magnitude due to the ultrathin structure of graphene. On the basis of the band-piezoelectric effect, a graphene nanogenerator and a pressure gauge were fabricated. The results not only provide a versatile NEMS platform for sensing, actuating and energy harvesting, but also pave the way for efficiently modulating graphene via strain engineering.

There is a growing need for developing machine learning applications. However, implementation of the machine learning algorithm consumes a huge number of transistors or memory devices on-chip. Developing a machine learning capability in a single device has so far remained elusive. Here, we build a Markov chain algorithm in a single device based on the native oxide of two dimensional multilayer tin selenide. After probing the electrical transport in vertical tin oxide/tin selenide/tin oxide heterostructures, two sudden current jumps are observed during the set and reset processes. Furthermore, five filament states are observed. After classifying five filament states into three states of the Markov chain, the probabilities between each states show convergence values after multiple testing cycles. Based on this device, we demo a fixed-probability random number generator within 5% error rate. This work sheds light on a single device as one hardware core with Markov chain algorithm.