Micro‐/Nanopillars for Micro‐ and Nanotechnologies Using Inductively Coupled Plasmas

Herth, Étienne; Edmond, Samson; Bouville, David; Cercus, Jean Luc; Bayle, Fabien; Cambril, E.

doi:10.1002/pssa.201900324

Cited by 13 publications

(7 citation statements)

References 44 publications

(73 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We considered thin masks, where ion sputtering fully eroded the top corner, leading to a tapering along the entire thin mask sidewall, as shown in Figure 5 a. Due to the high selectivity of silicon etching versus mask etching, which is well above 100 [ 45 , 46 ], masks thinner than 0.1

m may be employed in a SF 6 /O 2 plasma; nevertheless, we used 0.1

m as the minimum examined thickness, which still caused a significant sidewall etching, and the thinner masks’ impacts did not differ significantly in their anisotropic nature. In Figure 9 , we observe the effective changes induced in the etched profile due to faceting of a thin mask in a plasma with an oxygen fraction y O 2 = 0.5 in the feed gas by capturing the maximum depth and overall profile width, as well as the normalized location along the profile where the maximum width occurred.…”

Section: Resultsmentioning

confidence: 99%

Effect of Mask Geometry Variation on Plasma Etching Profiles

et al. 2023

View full text Add to dashboard Cite

It is becoming quite evident that, when it comes to the further scaling of advanced node transistors, increasing the flash memory storage capacity, and enabling the on-chip integration of multiple functionalities, “there’s plenty of room at the top”. The fabrication of vertical, three-dimensional features as enablers of these advanced technologies in semiconductor devices is commonly achieved using plasma etching. Of the available plasma chemistries, SF6/O2 is one of the most frequently applied. Therefore, having a predictive model for this process is indispensable in the design cycle of semiconductor devices. In this work, we implement a physical SF6/O2 plasma etching model which is based on Langmuir adsorption and is calibrated and validated to published equipment parameters. The model is implemented in a broadly applicable in-house process simulator ViennaPS, which includes Monte Carlo ray tracing and a level set-based surface description. We then use the model to study the impact of the mask geometry on the feature profile, when etching through circular and rectangular mask openings. The resulting dimensions of a cylindrical hole or trench can vary greatly due to variations in mask properties, such as its etch rate, taper angle, faceting, and thickness. The peak depth for both the etched cylindrical hole and trench occurs when the mask is tapered at about 0.5°, and this peak shifts towards higher angles in the case of high passivation effects during the etch. The minimum bowing occurs at the peak depth, and it increases with an increasing taper angle. For thin-mask faceting, it is observed that the maximum depth increases with an increasing taper angle, without a significant variation between thin masks. Bowing is observed to be at a maximum when the mask taper angle is between 15° and 20°. Finally, the mask etch rate variation, describing the etching of different mask materials, shows that, when a significant portion of the mask is etched away, there is a notable increase in vertical etching and a decrease in bowing. Ultimately, the implemented model and framework are useful for providing a guideline for mask design rules.

show abstract

m may be employed in a SF 6 /O 2 plasma; nevertheless, we used 0.1

Section: Resultsmentioning

confidence: 99%

Effect of Mask Geometry Variation on Plasma Etching Profiles

et al. 2023

View full text Add to dashboard Cite

show abstract

“…The structure was manufactured with SOG. Because the aspect ratio is directly related to the gyroscope performance, the DRIE [35,36]. process was used in the etching step to ensure that the gyroscope structure has a high aspect ratio and better performance.…”

Section: Fabricationmentioning

confidence: 99%

Design and Fabrication of a Novel Wheel-Ring Triaxial Gyroscope

Guo

Wei

Cai

et al. 2022

Sensors

View full text Add to dashboard Cite

This paper presents a new type of three-axis gyroscope. The gyroscope comprises two independent parts, which are nested to further reduce the structure volume. The capacitive drive was adopted. The motion equation, capacitance design, and spring design of a three-axis gyroscope were introduced, and the corresponding formulas were derived. Furthermore, the X/Y driving frequency of the gyroscope was 5954.8 Hz, the Y-axis detection frequency was 5774.5 Hz, and the X-axis detection frequency was 6030.5 Hz, as determined by the finite element simulation method. The Z-axis driving frequency was 10,728 Hz, and the Z-axis sensing frequency was 10,725 Hz. The MEMS gyroscope’s Z-axis driving mode and the sensing mode’s frequency were slightly mismatched, so the gyroscope demonstrated a larger bandwidth and higher Z-axis mechanical sensitivity. In addition, the structure also has good Z-axis impact resistance. The transient impact simulation of the gyroscope structure showed that the maximum stress of the sensitive structure under the impact of 10,000 g@5 ms was 300.18 Mpa. The gyroscope was produced by etching silicon wafers in DRIE mode to obtain a high aspect ratio structure, tightly connected to the glass substrate by silicon/glass anode bonding technology.

show abstract

“…One effective way to improve DRIE etch uniformity is to optimize etching parameters by providing a uniform plasma. Herth et al [13][14][15][16] investigated etching parameters to obtain highly uniform large-scale MEMS and micro-opto-electro-mechanical system (e.g. resonant mirrors) with ICP-DRIE.…”

Section: Introductionmentioning

confidence: 99%

Improvement on the uniformity of deep reactive ion etch for electrically isolated silicon-based substrates

Hu¹,

Zhen²,

Sun³

et al. 2022

J. Micromech. Microeng.

View full text Add to dashboard Cite

Substrate-free MEMS devices are becoming the hotspots for microsystems. The fabrication of substrate-free MEMS devices usually involves the release of backside silicon by the Inductively Coupled Plasma Deep Reactive Ion Etch (ICP-DRIE) process. However, when using DRIE to etch electrically isolated samples, significant non-uniformity in the etch profile were often observed. Compared to grounded silicon samples, the electrically isolated counterparts after DRIE showed a faster etch rate at the edge and a slower one in the centre. This phenomenon is believed to be caused by the interaction between the deflection of charge-bearing ions entering the aperture region and the accumulated charges on the sidewall during DRIE. Simulation results with ICP showed that the electric field and ion distribution can be affected in electrically isolated substrates. After the isolated samples were electrically grounded, the charge accumulation on the sidewall was reduced and 12% etch uniformity was obtained. This technique helps in the fabrication of substrate-free MEMS devices.

show abstract

Micro‐/Nanopillars for Micro‐ and Nanotechnologies Using Inductively Coupled Plasmas

Cited by 13 publications

References 44 publications

Effect of Mask Geometry Variation on Plasma Etching Profiles

Effect of Mask Geometry Variation on Plasma Etching Profiles

Design and Fabrication of a Novel Wheel-Ring Triaxial Gyroscope

Improvement on the uniformity of deep reactive ion etch for electrically isolated silicon-based substrates

Contact Info

Product

Resources

About