Polaronic interactions between oxygen vacancies in rutile 
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Zhao, Liang; Magyari-Köpe, Blanka; Nishi, Yoshio

doi:10.1103/physrevb.95.054104

Cited by 23 publications

(38 citation statements)

References 69 publications

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“…This approach can provide a more detailed understanding of the complex physics underlying formation of CFs in www.advelectronicmat.de different materials [204][205][206][207] and thus help to design devices for specific applications. [208] It can help to identify which material is best-suited for a given target application and provide a useful reference to calibrate appropriate semi-empirical and compact models.…”

Section: Microscopic Modelsmentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

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Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

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Section: Microscopic Modelsmentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

Self Cite

499

434

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“…We observe an oscillation which can be attributed to a beating between two different classes of spin-waves due to imperfect optical pumping into the |g, m F = 2 state [41,42]. The overall decay in retrieval efficiency has a time constant of 57 ± 1 µs, limited by atomic motion [21,39] and spurious magnetic field gradients [43]. We then switch on the gradient during the interrogation period.…”

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confidence: 97%

“…if ∆ω j (t ≤ T rev ) = −∆ω j (t ≥ T rev ). The retrieval efficiency at a time t is proportional to the overlap of the state at that time with the initial state: η ret (t) ∝ | ψ(0)|ψ(t) | 2 [39]. Therefore, we use η ret to monitor the spin-waves dephasing and rephasing in the following.…”

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confidence: 99%

Controlled Rephasing of Single Collective Spin Excitations in a Cold Atomic Quantum Memory

et al. 2015

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We demonstrate active control of inhomogeneous dephasing and rephasing for single collective atomic spin excitations (spin-waves) created by spontaneous Raman scattering in a quantum memory based on cold 87 Rb atoms. The control is provided by a reversible external magnetic field gradient inducing an inhomogeneous broadening of the atomic hyperfine levels. We demonstrate experimentally that active rephasing preserves the single photon nature of the retrieved photons. Finally, we show that the control of the inhomogeneous dephasing enables the creation of timeseparated spin-waves in a single ensemble, followed by a selective readout in time. This is an important step towards the implementation of a functional temporally multiplexed quantum repeater node. Atomic ensembles provide an efficient way of reaching the strong interaction between matter and light required for the implementation of quantum memories, without the need for high finesse cavities. In addition, they give the possibility to multiplex quantum information, which is desirable in several applications. In particular, in quantum repeater architectures, this alleviates the limitation due to the communication time between the nodes [28]. In atomic ensembles, quantum information is stored as collective atomic spin excitations, called spin-waves. Single spin-waves offer the important advantage that they can be efficiently transferred to single photons in a well defined spatio-temporal mode thanks to constructive interference between the involved atoms. In 2001, Duan, Cirac, Lukin and Zoller (DLCZ) proposed a protocol to implement a quantum repeater using the heralded creation of spin-waves in an atomic ensemble [5]. Several demonstrations of the building block of the protocol have been reported [12,16,29] including functional elementary segments of a quantum repeater [30,31]. Most of these demonstrations however, used only a single spin-wave per ensemble, although several ensembles have been already implemented in the same atom trap [32,33].A recent theoretical proposal has shown that the ability to precisely control the quantum state of single spinwaves would open new avenues for the realization of more efficient, temporally multiplexed quantum repeater architectures [34]. In particular, it has been proposed that the implementation of controlled dephasings and rephasings of single spin-waves would allow the creation of several time-separated single spin-waves in a single ensemble which could be selectively read out at different times. Rephasing protocols have also been proposed and implemented for optical collective atomic excitations, leading to the storage and retrieval of 64 weak optical modes in a rare-earth doped crystal [35], with pre-determined storage times. The capability to control the dephasing of spin-waves has also been used recently to implement a coherent optical pulse sequencer [36], efficient light storage for bright [37] and weak coherent pulses [17] using the gradient echo memory protocol [38], as well as storage of several temporal mo...

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“…On the theoretical side, several first-principle calculations of oxygen vacancies in rutile TiO 2 find energetically favored electronic bound states localized on neighboring Ti atoms. 24,25,27,[53][54][55] There is no consensus on the binding energy, although most experimental and theoretical estimates fall between 50 meV and 200 meV. The situation is similar for Ti interstitials, another important intrinsic defect, 56,57 and for extrinsic dopants such as Nb and F substitutions.…”

Section: High-temperature Thermoelectric Performancesmentioning

confidence: 99%

Investigating the high-temperature thermoelectric properties of n -type rutile TiO2

2019

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Transition metal oxides are considered promising thermoelectric materials for harvesting hightemperature waste heat due to their chemical and thermal stability, abundance and low toxicity. Despite their typically strong ionic character, they can exhibit surprisingly high power factors σS 2 , as in n-type SrTiO3 for instance. Thus, it is worth examining other transition metal oxides that might equal or even surpass the performances of strontium titanate. This theoretical paper investigates the thermoelectric properties of n-type rutile TiO2, which is the most stable phase of titanium oxide up to 2000 K. The electronic structure is obtained through density functional theory calculations, while the prominent features of strong electron-phonon interaction and defects states are modelled using a small number of parameters. The thermoelectric transport properties are computed by solving the Boltzmann transport equation with the relaxation time approximation. The theoretical results are compared with a wealth of experimental data from the literature, yielding very good agreements over a wide range of carrier concentrations. This validates the hypothesis of band conduction in rutile TiO2 and allows the prediction of the high-temperature thermoelectric properties. arXiv:1909.08554v2 [cond-mat.mtrl-sci]

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Polaronic interactions between oxygen vacancies in rutile TiO2

Cited by 23 publications

References 69 publications

Recommended Methods to Study Resistive Switching Devices

Recommended Methods to Study Resistive Switching Devices

Controlled Rephasing of Single Collective Spin Excitations in a Cold Atomic Quantum Memory

Investigating the high-temperature thermoelectric properties of n -type rutile TiO2

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