This article provides a comprehensive review of MXene materials and their energy-related applications.

Black phosphorus was first synthesized by Bridgman in 1914 [1] but has been less intensively studied in the past century due The successful isolation of phosphorene (atomic layer thick black phosphorus) in 2014 has currently aroused the interest of 2D material researchers. In this review, first, the fundamentals of phosphorus allotropes, phosphorene, and black phosphorus, are briefly introduced, along with their structures, properties, and synthesis methods. Second, the readers are presented with an overview of their energy applications. Particularly in electrochemical energy storage, the large interlayer spacing (0.53 nm) in phosphorene allows the intercalation/deintercalation of larger ions as compared to its graphene counterpart. Therefore, phosphorene may possess greater potential for high electrochemical performance. In addition, the status of lithium ion batteries as well as secondary sodium ion batteries is reviewed. Next, each application for energy generation, conversion, and storage is described in detail with milestones as well as the challenges. These emerging applications include supercapacitors, photovoltaic devices, water splitting, photocatalytic hydrogenation, oxygen evolution, and thermoelectric generators. Finally the fast-growing dynamic field of phosphorene research is summarized and perspectives on future possibilities are presented calling on the efforts of chemists, physicists, and material scientists

To synthesize graphene by chemical vapor deposition (CVD) both in large area and with uniform layer number directly over Si/SiO has proven challenging. The use of catalytically active metal substrates, in particular Cu, has shown far greater success and therefore is popular. That said, for electronics applications it requires a transfer procedure, which tends to damage and contaminate the graphene. Thus, the direct fabrication of uniform graphene on Si/SiO remains attractive. Here we show a facile confinement CVD approach in which we simply "sandwich" two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises faceted grains despite initially nucleating as round islands. Upon clustering, they facet to minimize their energy. This behavior leads to faceting in polygons, as the system aims to ideally form hexagons, the lowest energy form, much like the hexagonal cells in a beehive, which requires the minimum wax. This process also leads to a near minimal total grain boundary length per unit area. This fact, along with the high graphene quality, is reflected in its electrical performance, which is highly comparable with graphene formed over other substrates, including Cu. In addition, the graphene growth is self-terminating. Our CVD approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates, which suffer from transfer. Moreover, this CVD route should be applicable for the direct synthesis of other 2D materials and their van der Waals heterostructures.

Three-dimensional bimetallic nanoframes with high spatial diffusivity and surface heterogeneity possess remarkable catalytic activities owing to their highly exposed active surfaces and tunable electronic structure. Here we report a general one-pot strategy to prepare ultrathin octahedral Au 3 Ag nanoframes, with the formation mechanism explicitly elucidated through well-monitored temporal nanostructure evolution. Rich crystalline defects lead to lowered atomic coordination and varied electronic states of the metal atoms as evidenced by extensive structural characterizations. When used for electrocatalytic methanol oxidation, the Au 3 Ag nanoframes demonstrate superior performance with a high specific activity of 3.38 mA cm −2 , 3.9 times that of the commercial Pt/C. More intriguingly, the kinetics of methanol oxidation on the Au 3 Ag nanoframes is counter-intuitively promoted by carbon monoxide. The enhancement is ascribed to the altered reaction pathway and enhanced OH − co-adsorption on the defect-rich surfaces, which can be well understood from the d-band model and comprehensive density functional theory simulations.

Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

Twisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm2 V−1 s−1 confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications.

Investigations on monolayered transition metal dichalcogenides (TMDs) and TMD heterostructures have been steadily increasing over the past years due to their potential application in a wide variety of fields such as microelectronics, sensors, batteries, solar cells, and supercapacitors, among others. The present work focuses on the characterization of TMDs using transmission electron microscopy, which allows not only static atomic resolution but also investigations into the dynamic behavior of atoms within such materials. Herein, we present a body of recent research from the various techniques available in the transmission electron microscope to structurally and analytically characterize layered TMDs and briefly compare the advantages of TEM with other characterization techniques. Whereas both static and dynamic aspects are presented, special emphasis is given to studies on the electron-driven in situ dynamic aspects of these materials while under investigation in a transmission electron microscope. The collection of the presented results points to a future prospect where electron-driven nanomanipulation may be routinely used not only in the understanding of fundamental properties of TMDs but also in the electron beam engineering of nanocircuits and nanodevices.

Detection of small metallic wear debris is critical to identify abnormal wear conditions for prognosis of pending machinery failure. In this paper we applied an inductance–capacitance (LC) resonance method to an inductive pulse debris sensor to increase the sensitivity. By adding an external capacitor to the sensing coil of the sensor, a parallel LC resonance circuit is formed that has a unique resonant frequency. At an excitation frequency close to the resonant frequency, impedance change (and thus change in voltage output) of the LC circuit caused by the passage of a debris particle is amplified due to sharp change in impedance at the resonant peak; thus signal-to-noise ratio and sensitivity are significantly improved. Using an optimized measurement circuit, iron particles ranging from 32 to 96 µm and copper particles ranging from 75 to 172 µm were tested. Results showed that the parallel LC resonance method is capable of detecting a 20 µm iron particle and a 55 µm copper particle while detection limits for the non-resonance method are 45 and 125 µm, respectively. In contrast to the non-resonant method, the sensitivity of the resonance method has been significantly improved.