By means of ab initio simulations, we investigate the structural, electronic, and transport properties of boron and phosphorus doped silicon nanowires. We find that impurities always segregate at the surface of unpassivated wires, reducing dramatically the conductance of the surface states. Upon passivation, we show that for wires as large as a few nanometers in diameter, a large proportion of dopants will be trapped and electrically neutralized at surface dangling bond defects, significantly reducing the density of carriers. Important differences between p- and n-type doping are observed. Our results rationalize several experimental observations.

We present an ab initio study of the recently discovered superconductivity of boron doped diamond within the framework of a phonon-mediated pairing mechanism. The role of the dopant, in substitutional position, is unconventional in that half of the coupling parameter lambda originates in strongly localized defect-related vibrational modes, yielding a very peaked Eliashberg alpha2F(omega) function. The electron-phonon coupling potential is found to be extremely large, and T(C) is limited by the low value of the density of states at the Fermi level. The effect of boron isotope substitution is explored.

We perform ab initio calculations within the Landauer formalism to study the influence of doping on the conductance of surface-passivated silicon nanowires. It is shown that impurities located in the core of the wire induce a strong resonant backscattering at the impurity bound state energies. Surface dangling bond defects have hardly any direct effect on conductance, but they strongly trap both p- and n-type impurities, as evidenced in the case of H-passivated wires and Si/SiO2 interfaces. Upon surface trapping, impurities become transparent to transport, as they are electrically inactive and do not induce any resonant backscattering.