Polar Discontinuity Doping of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>LaVO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Interface

Hotta, Yoshiki; Susaki, Tomofumi; Hwang, Harold Y.

doi:10.1103/physrevlett.99.236805

Cited by 238 publications

(220 citation statements)

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“…H eterointerfaces between different oxide layers can display remarkable electrical properties 1 that differ from either constituent, such as a two-dimensional electron gas (2DEG, refs [2][3][4][5][6][7][8][9][10][11][12][13][14] and interfacial superconductivity 15 . The discovery of a 2DEG (ref.…”

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confidence: 99%

Creation of a two-dimensional electron gas at an oxide interface on silicon

et al. 2010

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In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlo 3 /srTio 3 (LAo/sTo) heterointerfaces grown directly on (001) silicon (si) substrates. The room-temperature electrical transport properties of LAo/sTo heterointerfaces on si are comparable with those formed from a srTio 3 bulk single crystal. The ability to form reversible conducting nanostructures directly on si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established si-based platforms.

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confidence: 99%

Creation of a two-dimensional electron gas at an oxide interface on silicon

et al. 2010

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“…Another direction is to generalize these electrostatic constraints to other interface systems. 31 As emphasized in Fig. 3, the "polarity mismatch" is quite general when considering oxide heterostructures with different components.…”

Section: Electrostatic Boundary Conditions In Heterostructuresmentioning

confidence: 99%

Emergent phenomena at oxide interfaces

et al. 2012

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BASIC NOTIONSTransition metal oxides (TMOs) are an ideal arena for the study of electronic correlations because the s-electrons of the transition metal ions are removed and transferred to oxygen ions, and hence the strongly correlated d-electrons determine their physical properties such as electrical transport, magnetism, optical response, thermal conductivity, and superconductivity. These electron correlations prohibit the double occupancy of metal sites and induce a local entanglement of charge, spin, and orbital degrees of freedom. This gives rise to a variety of phenomena, e.g., Mott insulators, various charge/spin/orbital orderings, metal-insulator transitions, multiferroics, and superconductivity. 1 In recent years, there has been a burst of activity to manipulate these phenomena, as well as create new ones, using oxide heterostructures. 2 Most fundamental to understanding the physical properties of TMOs is the concept of symmetry of the order parameter. As Landau recognized, the essence of phase transitions is the change of the symmetry. For example, ferromagnetic ordering breaks the rotational symmetry in spin space, i.e., the ordered phase has lower symmetry than the Hamiltonian of the system. There are three most important symmetries to be considered here. (i) Spatial inversion (I), defined as r  -r. In the case of an insulator, breaking this symmetry can lead to spontaneous electric SLAC-PUB-14626 SIMES,

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“…For the conventional metal/oxide interfaces, a thermodynamic criterion for the occurrence of metal oxidation on STO surfaces is that the heat of oxide formation per mole of oxygen should be lower than −250 kJ/(mol O) [16]. Surprisingly, most of the conductive interfaces observed in STO-based oxide/oxide hetero-structures prepared by PLD, LAO/STO [3], LaTiO 3 /STO [17], LaVO 3 /STO [18], CaHfO 3 /STO [13], STO/STO [11], Yttria-stabilized zirconia (YSZ)/STO [11], LaGaO 3 /STO [19], and BiFeO 3 /STO [20], consist of cation elements following the above thermodynamic criterion. However, it should be mentioned that the deposition of aLSMO films, whose cation elements also fall in the thermodynamic criterion, do not show any interfacial conductivity, as shown in Fig.…”

Section: Fig 1(a)-(c)mentioning

confidence: 99%

On the origin of metallic conductivity at the interface of LaAlO3/SrTiO3

Chen

Christensen

Trier

et al. 2012

Applied Surface Science

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a b s t r a c tTo determine the origin of the quasi-two-dimensional electron gas formed at the interface between the two complex oxides of LaAlO 3 (LAO) and SrTiO 3 (STO), various amorphous films of LAO, La 2 O 3 , Al 2 O 3 , and La 7/8 Sr 1/8 MnO 3 (LSMO), were deposited on TiO 2 -terminated (0 0 1) STO substrates by pulsed laser deposition at room temperature. Metallic interfaces are observed when the over-layers are amorphous LAO, La 2 O 3 , or Al 2 O 3 , while insulating interfaces are observed when the over-layer is LSMO. The interfacial conductivity of these SrTiO 3 -based hetero-structures shows strong dependence on both film thickness and oxygen pressure during film growth. The possible origin for the occurrence of metallic interfaces in these complex oxide hetero-structures due to redox reactions at the STO substrate surface is discussed. A thermodynamic criterion for designing either metallic or insulating interfaces between complex oxides is proposed.

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Polar Discontinuity Doping of theLaVO3/SrTiO3Interface

Cited by 238 publications

References 26 publications

Creation of a two-dimensional electron gas at an oxide interface on silicon

Creation of a two-dimensional electron gas at an oxide interface on silicon

Emergent phenomena at oxide interfaces

On the origin of metallic conductivity at the interface of LaAlO3/SrTiO3

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