We improve the quality of quantum circuits on superconducting quantum computing systems, as measured by the quantum volume (QV), with a combination of dynamical decoupling, compiler optimizations, shorter two-qubit gates, and excited state promoted readout. This result shows that the path to larger QV systems requires the simultaneous increase of coherence, control gate fidelities, measurement fidelities, and smarter software which takes into account hardware details, thereby demonstrating the need to continue to co-design the software and hardware stack for the foreseeable future.

Abstract:Nanoscale control of the metal-insulator transition in LaAlO 3 / SrTiO 3 heterostructures can be achieved using local voltages applied by a conductive atomic-force microscope probe. One proposed mechanism for the writing and erasing process involves an adsorbed H 2 O layer at the top LaAlO 3 surface. In this picture, water molecules dissociates into OH -and H + which are then selectively removed by a biased AFM probe. To test this mechanism, writing and erasing experiments are performed in a vacuum AFM using various gas mixtures. Writing ability is suppressed in those environments where H 2 O is not present. The stability of written nanostructures is found to be strongly associated with the ambient environment. The self-erasure process in air can be strongly suppressed by creating a modest vacuum or replacing the humid air with dry inert gas. These experiments provide strong constraints for theories of both the writing process as well as the origin of interfacial conductance. an insulating state. We refer to this process as a "water cycle" because it permits multiple writing and erasing without physical modification of the oxide heterostructure.Here we investigate the writing and erasing process on 3uc-LAO/STO heterostructures under a variety of atmospheric conditions, in order to constrain physical models of the writing and erasing procedure and the origin of the interfacial electron gas. Thin films (3 u.c.) of LaAlO 3 were deposited on a TiO 2 -terminated (001) SrTiO 3 substrates by pulsed laser deposition with in situ high pressure reflection high energy electron diffraction (RHEED) [18]. Growth was at a temperature of 550°C and O 2 pressure of 1×10 -3 Torr. 4After growth, electrical contacts to the interface were prepared by milling 25nm deep trenches via an Ar-ion mill and filling them with Au/Ti bilayer (2nm adhesion Ti layer and 23nm Au layer).To perform c-AFM experiments, a vacuum AFM ( FIG. 1(a)) is employed that is capable of operation down to 10 -5 Torr and allows controlled introduction of various gases. Writing and erasing experiments (

In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlo 3 /srTio 3 (LAo/sTo) heterointerfaces grown directly on (001) silicon (si) substrates. The room-temperature electrical transport properties of LAo/sTo heterointerfaces on si are comparable with those formed from a srTio 3 bulk single crystal. The ability to form reversible conducting nanostructures directly on si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established si-based platforms.

Devices that confine and process single electrons represent an important scaling limit of electronics. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties. Here, we use an atomic force microscope tip to reversibly 'sketch' single-electron transistors by controlling a metal-insulator transition at the interface of two oxides. In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of ∼1.5 nm. We demonstrate control over the number of electrons on the island using bottom- and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. These single-electron devices may find use as ultradense non-volatile memories, nanoscale hybrid piezoelectric and charge sensors, as well as building blocks in quantum information processing and simulation platforms.

The resonator-induced phase (RIP) gate is an all-microwave multiqubit entangling gate that allows a high degree of flexibility in qubit frequencies, making it attractive for quantum operations in large-scale architectures. We experimentally realize the RIP gate with four superconducting qubits in a three-dimensional circuit-QED architecture, demonstrating high-fidelity controlled-z (cz) gates between all possible pairs of qubits from two different 4-qubit devices in pair subspaces. These qubits are arranged within a wide range of frequency detunings, up to as large as 1.8 GHz. We further show a dynamical multiqubit refocusing scheme in order to isolate out 2-qubit interactions, and combine them to generate a 4-qubit Greenberger-Horne-Zeilinger state.

Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of the most challenging aspects of device development. Here we report the development of rewritable nanoscale photodetectors created at the interface between LaAlO3 and SrTiO3. Nanowire junctions with characteristic dimensions 2-3 nm are created using a reversible AFM writing technique. These nanoscale devices exhibit a remarkably high gain for their size, in part because of the large electric fields produced in the gap region. The photoconductive response is gate-tunable and spans the visible-to-near-infrared regime. The ability to integrate rewritable nanoscale photodetectors with nanowires and transistors in a single materials platform foreshadows new families of integrated optoelectronic devices and applications.Comment: 5 pages, 5 figures. Supplementary Information 7 pages, 9 figure

The selectins are Ca(2+)-dependent cell adhesion molecules that facilitate the initial attachment of leukocytes to the vascular endothelium by binding to a carbohydrate moiety as exemplified by the tetrasaccharide, sialyl Lewis X (sLeX). An important property of the selectin-sLeX interaction is its ability to withstand the hydrodynamic force of the blood flow. Herein, we used single-molecule dynamic force spectroscopy (DFS) to identify the molecular determinants within sLeX that give rise to the dynamic properties of the selectin/sLeX interaction. Our atomic force microscopy (AFM) measurements revealed that the unbinding of the selectin/sLeX complexes involves overcoming at least two activation barriers. The inner barrier, which determines the dynamic response of the complex at high forces, is governed by the interaction between the Fuc residue of sLeX and a Ca2+ ion chelated to the lectin domain of the selectin molecule, whereas the outer activation barrier can be attributed to interactions involving the sialic acid residue of sLeX. Due to their steep inner activation barriers, the selectin-sLeX complexes are less sensitive to high pulling forces. Hence, besides its contribution to the bond energy, the Ca2+ ion also grants the selectin-sLeX complexes a tensile strength that is crucial for the selectin-mediated rolling of leukocytes.

We improve the quality of quantum circuits on superconducting quantum computing systems, as measured by the quantum volume, with a combination of dynamical decoupling, compiler optimizations, shorter two-qubit gates, and excited state promoted readout. This result shows that the path to larger quantum volume systems requires the simultaneous increase of coherence, control gate fidelities, measurement fidelities, and smarter software which takes into account hardware details, thereby demonstrating the need to continue to co-design the software and hardware stack for the foreseeable future.