In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlo 3 /srTio 3 (LAo/sTo) heterointerfaces grown directly on (001) silicon (si) substrates. The room-temperature electrical transport properties of LAo/sTo heterointerfaces on si are comparable with those formed from a srTio 3 bulk single crystal. The ability to form reversible conducting nanostructures directly on si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established si-based platforms.
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