Creation of a two-dimensional electron gas at an oxide interface on silicon

Park, J.W.; Bogorin, Daniela F.; Cen, Cheng; Felker, D. A.; Zhang, Y.; Nelson, Cindy; Bark, Chung Wung; Folkman, C. M.; Pan, Xiaoqing; Rzchowski, M. S.; Levy, Jeremy; Eom, C. B.

doi:10.1038/ncomms1096

Cited by 168 publications

(141 citation statements)

References 26 publications

Supporting

Mentioning

134

Contrasting

Order By: Relevance

“…This has been tried with some success, for instance on silicon, 79 on LSAT and on NdGaO 3 . 80 It however turned out to be difficult to preserve metallicity down to low temperatures.…”

Section: Summary and Perspectivesmentioning

confidence: 99%

Research Update: Conductivity and beyond at the LaAlO3/SrTiO3 interface

2016

View full text Add to dashboard Cite

In this review, we focus on the celebrated interface between two band insulators, LaAlO3 and SrTiO3, that was found to be conducting, superconducting, and to display a strong spin-orbit coupling. We discuss the formation of the 2-dimensional electron liquid at this interface, the particular electronic structure linked to the carrier confinement, the transport properties, and the signatures of magnetism. We then highlight distinctive characteristics of the superconducting regime, such as the electric field effect control of the carrier density, the unique tunability observed in this system, and the role of the electronic subband structure. Finally we compare the behavior of Tc versus 2D doping with the dome-like behavior of the 3D bulk superconductivity observed in doped SrTiO3. This comparison reveals surprising differences when the Tc behavior is analyzed in terms of the 3D carrier density for the interface and the bulk.

show abstract

“…This has been tried with some success, for instance on silicon, 79 on LSAT and on NdGaO 3 . 80 It however turned out to be difficult to preserve metallicity down to low temperatures.…”

Section: Summary and Perspectivesmentioning

confidence: 99%

Research Update: Conductivity and beyond at the LaAlO3/SrTiO3 interface

2016

View full text Add to dashboard Cite

show abstract

“…Since the first methods to epitaxially deposit perovskite thin films on Si were established 4 , the growth process has been carefully optimized 5 and single crystalline layers were fabricated even on large-scale 8 00 substrates 6 . However, the interest in this research field has mainly been motivated by the use of oxides in the electronic domain, such as memory applications 7 , gate dielectrics in field-effect transistors 8 or alloxide electronics 9 . Meanwhile, the steadily improving performance of complementary metal oxide semiconductor (CMOS) technology increases the difficulty to handle inter-or intra-chip data communication by means of electrical wiring 10 because of power constraints in combination with increased bandwidth demands.…”

mentioning

confidence: 99%

A strong electro-optically active lead-free ferroelectric integrated on silicon

et al. 2013

View full text Add to dashboard Cite

The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of r eff ¼ 148 pm V À 1 , which is five times larger than in the current standard material for electrooptical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.

show abstract

“…[1][2][3][4][5][6] This highly conductive 2DEG exists because of a polar discontinuity at the interface of the perovskite oxide crystals resulting from valence mismatch. Moreover, these heterostructures exhibit intriguing physical phenomena and hold potential for novel electronic devices with promising properties including high breakdown voltages and extremely large electron sheet densities.…”

mentioning

confidence: 99%

Large nanoscale electronic conductivity in complex oxide heterostructures with ultra high electron density

et al. 2016

View full text Add to dashboard Cite

We study the two-dimensional electron gas at the interface of NdTiO3 and SrTiO3 to reveal its nanoscale transport properties. At electron densities approaching 1015 cm−2, our terahertz spectroscopy data show conductivity levels that are up to six times larger than those extracted from DC electrical measurements. Moreover, the largest conductivity enhancements are observed in samples intentionally grown with larger defect densities. This is a signature of electron transport over the characteristic length-scales typically probed by electrical measurements being significantly affected by scattering by structural defects introduced during growth, and, a trait of a much larger electron mobility at the nanoscale.

show abstract

Creation of a two-dimensional electron gas at an oxide interface on silicon

Cited by 168 publications

References 26 publications

Research Update: Conductivity and beyond at the LaAlO3/SrTiO3 interface

Research Update: Conductivity and beyond at the LaAlO3/SrTiO3 interface

A strong electro-optically active lead-free ferroelectric integrated on silicon

Large nanoscale electronic conductivity in complex oxide heterostructures with ultra high electron density

Contact Info

Product

Resources

About