Plasmonic-organic hybrid (POH) modulators for OOK and BPSK signaling at 40 Gbit/s

Melikyan, Argishti; Koehnle, K.; Lauermann, Matthias; Palmer, R.; Koeber, S.; Muehlbrandt, S.; Schindler, Philipp; Elder, Delwin L.; Wolf, S.; Heni, Wolfgang; Haffner, Christian; Fedoryshyn, Yuriy; Hillerkuss, D.; Sommer, Martin; Dalton, L. R.; Thourhout, Dries Van; Freude, W.; Kohl, Manfred; Leuthold, Juerg; Koos, Christian

doi:10.1364/cleo_si.2015.sm1i.1

Cited by 18 publications

(31 citation statements)

References 23 publications

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“…The viability of POH electro-optic modulators was demonstrated in first data transmission experiments using binary phase-shift keying (BPSK) and conventional on-off keying (OOK) at data rates of 40 Gbit/s as well as bipolar amplitude shift keying with four levels (4ASK) at 90 Gbit/s [25], [26], [28]. The MZM device layout and the experimental results for 40 Gbit/s OOK are depicted in Figure 7 [26].…”

Section: B Experimental Demonstrations Of Poh Devicesmentioning

confidence: 99%

“…The MZM device layout and the experimental results for 40 Gbit/s OOK are depicted in Figure 7 [26]. The device consists of a Mach-Zehnder interferometer realized by conventional SOI strip waveguides with embedded POH phase shifter sections, see Figure 7 (a), (b), and (c).…”

Section: B Experimental Demonstrations Of Poh Devicesmentioning

confidence: 99%

“…For the overall propagation loss of a doped slot waveguide after optimization, we hence estimate an upper boundary of 2 dB/mm -slightly worse than for the pn-depletion-type device. Plasmonic slot waveguides have considerably higher losses of the order of 400 dB/mm for current devices based on Au structures [26], which might be reduced to 200 dB/mm by replacing Au with Ag [28]. In this context, it is important to consider that POH devices are significantly shorter than their SOH or depletiontype counterparts, which strongly mitigates the loss issue.…”

Section: Comparison Of Device Concepts and Performancementioning

confidence: 99%

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Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) Integration

Koos

Leuthold

Freude

et al. 2015

Optical Fiber Communication Conference

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Abstract-Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, neither silicon nor metals exhibit appreciable second-order optical nonlinearities, thereby making efficient electro-optic modulators challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonicorganic hybrid (POH) integration, which combine silicon-oninsulator (SOI) waveguides and plasmonic nanostructures with organic electro-optic cladding materials.Index Terms-Electro-optic modulators, photonic integrated circuits, silicon photonics, plasmonics, nonlinear optical devicesElectro-optic (EO) modulators are key building blocks for highly integrated photonic-electronic circuits on the silicon

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Section: B Experimental Demonstrations Of Poh Devicesmentioning

confidence: 99%

Section: B Experimental Demonstrations Of Poh Devicesmentioning

confidence: 99%

Section: Comparison Of Device Concepts and Performancementioning

confidence: 99%

See 1 more Smart Citation

Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) Integration

Koos

Leuthold

Freude

et al. 2015

Optical Fiber Communication Conference

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“…Moreover, free carriers in the pn-junction do not only modulate the real part of the refractive index, but also the imaginary part, thereby leading to amplitude-phase coupling and hence to nonzero chirp parameters of, e.g., |α| = 0.8 even for well-balanced push-pull devices [15]. Another approach to realize high-speed MZM relies on the concept of plasmonic-organic hybrid (POH) integration [16]. POH MZM combine ultra-small footprint [17] with unprecedented modulation bandwidths that enable data rates of up to 120 Gbit/s for PAM4 signaling [18].…”

Section: Introductionmentioning

confidence: 99%

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

Zwickel¹,

Wolf²,

Kieninger³

et al. 2017

Opt. Express

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High-speed interconnects in data-center and campus-area networks crucially rely on efficient and technically simple transmission techniques that use intensity modulation and direct detection (IM/DD) to bridge distances of up to a few kilometers. This requires electrooptic modulators that combine low operation voltages with large modulation bandwidth and that can be operated at high symbol rates using integrated drive circuits. Here we explore the potential of silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) for generating high-speed IM/DD signals at line rates of up to 120 Gbit/s. Using a SiGe BiCMOS signalconditioning chip, we demonstrate that intensity-modulated duobinary (IDB) signaling allows to efficiently use the electrical bandwidth, thereby enabling line rates of up to 100 Gbit/s at bit error ratios (BER) of 8.5 × 10 −5 . This is the highest data rate achieved so far using a silicon-based MZM in combination with a dedicated signal-conditioning integrated circuit (IC). We further show four-level pulse-amplitude modulation (PAM4) at lines rates of up to 120 Gbit/s (BER = 3.2 × 10 −3 ) using a high-speed arbitrary-waveform generator and a 0.5 mm long MZM. This is the highest data rate hitherto achieved with a sub-millimeter MZM on the silicon photonic platform.

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“…In this paper we chose plasmonic Mach-Zehnder modulator (MZM) configurations to encode information onto an optical carrier [16,24]. We start this section by first detailing the operation principle of the plasmonic phase modulators (PPMs) [15] in section 3.1 and then discussing the MZM configuration and its performance.…”

Section: Plasmonic Mach-zehnder Modulatorsmentioning

confidence: 99%

High speed plasmonic modulator array enabling dense optical interconnect solutions

Heni¹,

Hoessbacher²,

Haffner³

et al. 2015

Opt. Express

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Plasmonic modulators might pave the way for a new generation of compact low-power high-speed optoelectronic devices. We introduce an extremely compact transmitter based on plasmonic Mach-Zehnder modulators offering a capacity of 4 × 36 Gbit/s on a footprint that is only limited by the size of the high-speed contact pads. The transmitter array is contacted through a multicore fiber with a channel spacing of 50 μm.

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Plasmonic-organic hybrid (POH) modulators for OOK and BPSK signaling at 40 Gbit/s

Cited by 18 publications

References 23 publications

Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) Integration

Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) Integration

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

High speed plasmonic modulator array enabling dense optical interconnect solutions

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