Plasma-Wave Detectors for Terahertz Wireless Communication

Blin, S.; Теппе, Ф.; Tohmé, L.; Hisatake, Shintaro; Arakawa, Kazuki; Nouvel, P.; Coquillat, Dominique; Pénarier, A.; Torres, J.; Varani, L.; Knap, W.; Nagatsuma, Tadao

doi:10.1109/led.2012.2210022

Cited by 33 publications

(24 citation statements)

References 12 publications

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“…Several recent experiments have shown that HEMTs can be used as efficient detectors or THz radiation [4]. The coupling between the incident radiation and the transistors is supposed to take place essentially through the metallic contacts even in the absence of an antenna connected to these electrodes.…”

Section: External Thz Signal Detectionmentioning

confidence: 99%

“…For these reasons, modern FETs are among the most promising devices for the development of low-cost THz detectors and emitters working at room temperature. A huge number of potential applications is expected in this field and they may greatly benefit from the development of integrated systems based on high-mobility FETs (see, for instance, modern progresses in ultrafast wireless telecommunications [4]). …”

Section: Introductionmentioning

confidence: 99%

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Terahertz detection and electronic noise in field-effect transistors

Mahi

Belghachi

Marinchio

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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High electron-mobility transistors can be used as efficient detectors of an incident THz radiation on its metallic electrodes. This detection can become strongly resonant if the frequency of the THz radiation coincides with plasma eigenfrequencies of the transistor channel. By using a hydrodynamic model we investigate in parallel the transistor intrinsic highfrequency current noise spectrum and its harmonic and average current responses to a voltage perturbation at the electrodes. In both cases we discuss the appearance of resonances associated with the excitation of 2D and 3D plasma modes and, to get an additional physical insight into the properties of the different parts of the transistor, we compute also the local noise spectra originated by electron velocity perturbations distributed in the channel. We demonstrate that the main resonances in the drain current noise spectrum are the same as those observed in the current response to an external THz excitation thus confirming the strong link existing between these two quantities.

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Section: External Thz Signal Detectionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Terahertz detection and electronic noise in field-effect transistors

Mahi

Belghachi

Marinchio

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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“…For that purpose, we choose a pseudomorphic high-electron-mobility GaAs transistor (pHEMT) with a 200 nm gate length. Previous measurements have shown that these transistors are very sensitive to accidental external coupling through their gate and their source (ground coupling) [6]. Indeed, coupling through the gate induces amplification of the coupled signal.…”

Section: Fet Detector Characterizationmentioning

confidence: 99%

“…At the moment, Schottky barrier diodes are by far the best detectors for communication, due to their high sensitivity (10 kV/W at 0.3 THz) [3]. More recently, field-effect transistors (FETs) have also been demonstrated to be an alternative for low cost THz detection in wireless communication [6]. Detection by FETs can be very promising in comparison to existing detectors based on Schottky diodes as it is more easily compatible with integrated circuits such as demodulation circuits.…”

Section: Introductionmentioning

confidence: 99%

Signal-to-noise ratio in terahertz wireless communication using field-effect-transistors as detectors

Tohmé

Blin

Nouvel

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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We report on terahertz wireless communication experiments at 0.2 THz, using a commercial GaAs field-effecttransistor as detector. For the first time, we will present the transmission of pseudo-random bit sequence at 0.2 THz using this commercial transistor and demonstrate open eye-patterns up to 1.5 Gbps. This transistor is integrated into a machined horn, so that its sensitivity is improved to 1 V/W, and has a 10 GHz cut-off frequency. We will discuss signal-to-noise ratio in the terahertz wireless data transmission.

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“…In particular, sine-wave amplitude modulation detection was achieved using a plasma-wave transistor, at modulation frequencies of up to a few GHz, using a 300 GHz carrier frequency [7]. These transistors also have the advantage, among others, of having a low and gate voltage tunable output impedance (from a few Ω to kΩ) if the gate voltage is tuned.…”

mentioning

confidence: 99%

Terahertz wireless communication using GaAs transistors as detectors

et al. 2014

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The detection of high data-rate wireless communication using a terahertz-frequency carrier, and a GaAs transistor as a detector, is reported. Communications are investigated around 0.2 and 0.3087 THz. For the first time, an error-free transmission at data rates up to 8.2 Gbit/s is demonstrated, using a carrier frequency of 0.3087 THz.Introduction: With the present development of communication technologies, more and more users need solutions to transmit wireless data at very high rates. In this Letter, we are interested in high data-rate transmission in the terahertz (THz) domain. The use of a THz carrier frequency enables data transmission up to 100 Gbit/s [1].Schottky barrier diodes are widely used as detectors for high data-rate communications [1][2][3]. Owing to their high sensitivity (a few of kV/W), they are presently the best available detectors for THz communication. However, these diodes suffer from their high output impedance, thus limiting integration with low-impedance high-bandwidth amplifiers. Moreover, they are not robust to high THz powers, and one has to handle them cautiously as they are very sensitive to electrostatic discharges.To overcome the above drawbacks, we propose the use of pseudomorphic high-electron-mobility GaAs transistors (pHEMT), as recent studies have demonstrated their capabilities to detect THz radiation [4][5][6]. In particular, sine-wave amplitude modulation detection was achieved using a plasma-wave transistor, at modulation frequencies of up to a few GHz, using a 300 GHz carrier frequency [7]. These transistors also have the advantage, among others, of having a low and gate voltage tunable output impedance (from a few Ω to kΩ) if the gate voltage is tuned. Their easy on-chip integration with a monolithic microwave integrated circuit, robustness to high input power and low cost also make them the detectors of choice in communication applications.In this Letter, we propose a strategy to obtain a significant improvement of the transistor performances, in order to detect real data at higher data rates. For this purpose, extra work was conducted on packaging the pHEMT in a home-made horn with a rectangular waveguide. This horn permits us to increase the gathered THz power, thus improving the pHEMT sensitivity by up to a few V/W at 280 GHz ± 30 GHz. The rectangular waveguide was designed in order to ensure a small incoming beam waist at the transistor, and to reduce the detection of undesired noise. This screening is important because the undesired coupled signals/noise might be amplified by the transistor. The transistors are also biased with a gate-source voltage. The choice of voltage is a trade-off between increasing the sensitivity and keeping relatively low output impedance, which is necessary for fast data transfer [6].In this Letter, we first remind the reader of the existing performances and limitations at 0.2 THz [8]. Then, we explain how we exceeded these limitations in order to be able to detect higher data rates, up to 8.2 Gbit/s, by using a 0.3087 THz carrier freque...

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Plasma-Wave Detectors for Terahertz Wireless Communication

Cited by 33 publications

References 12 publications

Terahertz detection and electronic noise in field-effect transistors

Terahertz detection and electronic noise in field-effect transistors

Signal-to-noise ratio in terahertz wireless communication using field-effect-transistors as detectors

Terahertz wireless communication using GaAs transistors as detectors

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