Plasma Time in Semiconductor Detectors

Quaranta, A. Alberigi; Taroni, A.; Zanarini, G.

doi:10.1109/tns.1968.4324961

Cited by 41 publications

(8 citation statements)

References 8 publications

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“…4b . Discrepancies between the front irradiation plateau voltage for the model and the measured results may be due to plasma time recombination effects [30,55].…”

mentioning

confidence: 91%

Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer

McGregor

Rojeski

Knoll

et al. 1994

Nuclear Instruments and Methods in Physics Research Section A:

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Bulk GaAs has undergone extensive research by several groups in order to ascertain its usefulness as a room temperature radiation spectrometer. The results of an experimental program studying the properties of detectors fabricated from bulk GaAs are summarized in this paper. Electric field models of the active region are compared with measured results. Limitations of bulk LEC GaAs as a material for radiation spectrometers are discussed.

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“…4b . Discrepancies between the front irradiation plateau voltage for the model and the measured results may be due to plasma time recombination effects [30,55].…”

mentioning

confidence: 91%

Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer

McGregor

Rojeski

Knoll

et al. 1994

Nuclear Instruments and Methods in Physics Research Section A:

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“…A significant difference between the DEÀE and the PSD techniques results from the fact that the former is governed basically by the energy loss process (Bragg curve), while the latter is primarily related to the plasma delay effect (PDE) [1][2][3][4][5][6][7][8]. In silicon detectors, this effect manifests itself with shortening of the pulse rise time with decreasing Z for low and intermediate mass fragments, for which the generated charge is practically completely collected by the detector electrodes.…”

Section: Introductionmentioning

confidence: 99%

Description of the plasma delay effect in silicon detectors

Sosin¹

2012

Nuclear Instruments and Methods in Physics Research Section A:

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A new method of modeling of the current signal induced by charged particle in silicon detectors is presented. The approach is based on the Ramo-Shockley theorem for which the charge carrier velocities are determined by taking into account not only the external electric field generated by the electrodes, but also the Coulomb interaction between the electron and hole clouds as well as their diffusion.Comment: 8 figure

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“…At low electric fields, E, in fact, when more likely it is tp >> T+, regions in the detectors characterised by different 7's cannot be distinguished; on the contrary at higher electric fields, as a consequence of the decrease of the tp with E as it has been already observed in Si [27] and in CdTe [28], the same aforesaid regions can start to be distinguishable.…”

Section: Discussionmentioning

confidence: 83%

“…i) the inequality cc% > cce,, both for front and back exposure, since the plasma effect is stronger for 5.48 MeV a-particles [27];…”

Section: Discussionmentioning

confidence: 98%

Analysis of uniformity of as prepared and irradiated SI GaAs radiation detectors

Nava

Vanni²,

Canali³

et al. 1998

IEEE Trans. Nucl. Sci.

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SI (semi-insulating) LEC (Liquid Encapsulated Czochralsky) GaAs (gallium arsenide) Schottky barrier detectors have been irradiated with high energy protons (24 GeV/c, fluence up to 1 6 . 4 5~1 0 '~ p/cm2). The detectors have been characterised in terms of I/V curves, charge collection efficiency (cce) for incident 5.48 MeV a-, 2 MeV proton and minimum ionizing P-particles and of cce maps by microprobe technique IBIC (Ion Beam Induced Charge).At the highest fluence a significant degradation of the electron and hole collection efficiencies and a remarkable improvement of the FWHM energy resolution have been measured with aand proton particles. Furthermore the reduction in the cce is greater than the one measured with pparticles and the energy resolution worsens with increasing the applied bias, V,, above the voltage Va necessary to extend the electric field all the way to the ohmic contact. On the contrary, in the unirradiated detectors the charge collection efficiencies with a-, pand proton particles are quite similar and the energy resolution improves with increasing V, > Vd.IBIC spectra and IBIC space maps obtained by scanning a focused (8 pm' ) 2 MeV proton microbeam on front (Schottky) and back (ohmic) contacts, support the observed electric field dependence of the energy resolution both in unirradiated and most irradiated detectors.The results obtained let us explain the effect of the electric field strength and the plasma on the collection of the charge carriers and the FWHM energy resolution.

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Plasma Time in Semiconductor Detectors

Cited by 41 publications

References 8 publications

Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer

Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer

Description of the plasma delay effect in silicon detectors

Analysis of uniformity of as prepared and irradiated SI GaAs radiation detectors

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