Description of the plasma delay effect in silicon detectors

Sosin, Z.

doi:10.1016/j.nima.2012.07.020

Cited by 15 publications

(12 citation statements)

References 18 publications

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“…Indeed, it has been shown since pioneering works on PSA [22] that ion identification is lost when ions have short ranges in silicon (i.e., low energies). This experimental observation was reproduced by our simulations [1,23,24], as well. Although very thin large-area detectors appear to be inappropriate for PSA applications, their development is of extreme interest for the heavy-ion research at low energies, as those foreseen at the next radioactive beam ISOL laboratories like SPES and SPIRAL-2.…”

Section: Under Beam Testsupporting

confidence: 75%

Low-temperature technique of thin silicon ion implanted epitaxial detectors

et al. 2015

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Abstract.A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a lowtemperature baking process instead of high-temperature annealing. This thermal treatment is performed after B + ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241 Am ( E α = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm 2 ) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84 Kr(E = 35 A MeV)+ 112 Sn. The ΔE −E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.

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Section: Under Beam Testsupporting

confidence: 75%

Low-temperature technique of thin silicon ion implanted epitaxial detectors

et al. 2015

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“…The description of the signal shape by realistic simulations will hopefully provide automatic procedures of calibration and nuclear fragment identification in large scale arrays, provided that the preamplifier transfer function is known [11]. Microscopic approaches [12,14] give insight on the screening due to the high bulk concentration of the generated charge carriers and on their transport; however they require large computing times. To circumvent this obstacle, phenomenological approaches have been also conducted [13].…”

Section: Simulation and Study Of Signals Generated By Charged Particlmentioning

confidence: 99%

“…The model [14] is in some respect an extension of that shown in [12]. It uses Gaussian clouds for carrier propagation representation.…”

Section: Quasi-microscopic Treatmentmentioning

confidence: 99%

“…For the calculation, physical coefficients describing the effective electric field propagation, the drift and diffusion processes in silicon are used. As mentioned in [14] only one coefficient is a free parameter for the description of the plasma delay effect, the electron variance mobility, μ σe , related to the evolution of the Gaussian variance. It was set to 2 μm 2 V ns (about 1.5% of mobility) and the holes variance mobility is deduced by the following model assumption:…”

Section: Quasi-microscopic Treatmentmentioning

confidence: 99%

“…In fact it demonstrated the importance of the electrostatic interaction among charge carriers for the charge collection process. Section 5 presents also another simulation which has been developed in the second part of the R&D phase [14]. Section 6 addresses a Contribution to the Topical Issue "Nuclear Symmetry Energy" edited by Bao-An Li,Àngels Ramos, Giuseppe Verde, Isaac Vidaña.…”

Section: Introductionmentioning

confidence: 99%

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The FAZIA project in Europe: R&D phase

Bougault¹,

Poggi²,

Barlini³

et al. 2014

Eur. Phys. J. A

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Abstract. The goal of the FAZIA Collaboration is the design of a new-generation 4π detector array for heavy-ion collisions with radioactive beams. This article summarizes the main results of the R&D phase, devoted to the search for significant improvements of the techniques for charge and mass identification of reaction products. This was obtained by means of a systematic study of the basic detection module, consisting of two transmission-mounted silicon detectors followed by a CsI(Tl) scintillator. Significant improvements in ΔE-E and pulse-shape techniques were obtained by controlling the doping homogeneity and the cutting angles of silicon and by putting severe constraints on thickness uniformity. Purposely designed digital electronics contributed to identification quality. The issue of possible degradation related to radiation damage of silicon was also addressed. The experimental activity was accompanied by studies on the physics governing signal evolution in silicon. The good identification quality obtained with the prototypes during the R&D phase, allowed us to investigate also some aspects of isospin physics, namely isospin transport and odd-even staggering. Now, after the conclusion of the R&D period, the FAZIA Collaboration has entered the demonstrator phase, with the aim of verifying the applicability of the devised solutions for the realization of a larger-scale experimental set-up.

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Signal Generation in Radiation Detectors

2017

Signal Processing for Radiation Detectors

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Description of the plasma delay effect in silicon detectors

Cited by 15 publications

References 18 publications

Low-temperature technique of thin silicon ion implanted epitaxial detectors

Low-temperature technique of thin silicon ion implanted epitaxial detectors

The FAZIA project in Europe: R&D phase

Signal Generation in Radiation Detectors

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