Piezoresistive Properties of Polycrystalline Silicon Thin Film

Onuma, Yoshiharu; Sekiya, Kunihiko

doi:10.1143/jjap.11.20

Cited by 31 publications

(9 citation statements)

References 4 publications

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“…Piezoresistive effects in polysilicon were studied extensively in the 1970s and 1980s [134]–[146]. French and Evans presented a theoretical model for piezoresistance in polysilicon as a function of doping, grain size, and orientation and proposed an optimum set of processing parameters for a given grain size [145].…”

Section: Piezoresistance Fundamentalsmentioning

confidence: 99%

Review: Semiconductor Piezoresistance for Microsystems

et al. 2009

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Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

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Section: Piezoresistance Fundamentalsmentioning

confidence: 99%

Review: Semiconductor Piezoresistance for Microsystems

et al. 2009

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“…The gauge factor (GF) is used to characterize the PZR sensitivity; GF is defined as the ratio of the normalized change in Si resistivity to the applied strain e. For a single-crystal Si in certain directions, such as the h1 1 0i direction, the GF lies between 50 and 100. Similarly, the discovery of the PZR effect in polycrystalline Si (polysilicon) in the 1970s [8,9] facilitates its sensing applications [10,11]. The polysilicon as a piezoresistive material instead of the single-crystalline Si offers the advantages of low cost, ease of processing, and good thermal stability, and p-n junction isolation is not necessary even though its GF value is lowered.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of p-type polysilicon piezoresistance in a full-bridge circuit for surface stress sensors

Kang

2015

Measurement

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“…They are also often fabricated from polycrystalline silicon films, usually referred to as polysilicon or poly. Piezoresistor effects in polysilicon were studied extensively in the 1970s and 1980s [4], [5]. Piezoresistive transduction can be used to efficiently transduce resonator motion into an electrical signal.…”

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of polysilicon piezoresistors in a CMOS-MEMS resonator for mass detection

Gafare

Khir

Rabih

et al. 2015

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

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This paper reports modeling and simulation of polysilicon piezoresistors as sensing mechanism using commercial 0.35 m complementary metal oxide semiconductor (CMOS) process. The CMOS-MEMS resonator is designed to detect change in mass. The designed piezoresistors are composed of two types; longitudinal and transverse. CMOS polysilicon thin film is used as the piezoresistive sensing material. The finite element analysis (FEA) software CoventorWare is adopted to simulate the piezoresistors and hence, compare its values with the modeled one. When actuation voltage is applied to the piezoresistors, it generates a change in resistance which is detected by the change in current. The percentage difference between simulated stressed and unstressed current is found to be 0.28 % and 0.47 % while the difference in the resistance between the model and simulation is 1.96 % and 4.54 % for the transverse and longitudinal piezoresistors, respectively.

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Piezoresistive Properties of Polycrystalline Silicon Thin Film

Cited by 31 publications

References 4 publications

Review: Semiconductor Piezoresistance for Microsystems

Review: Semiconductor Piezoresistance for Microsystems

Evaluation of p-type polysilicon piezoresistance in a full-bridge circuit for surface stress sensors

Modeling and simulation of polysilicon piezoresistors in a CMOS-MEMS resonator for mass detection

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