Review: Semiconductor Piezoresistance for Microsystems

Barlian, A.A.; Park, Woo-Tae; Mallon, Joseph R.; Rastegar, Ali; Pruitt, Beth L.

doi:10.1109/jproc.2009.2013612

Cited by 800 publications

(523 citation statements)

References 347 publications

(393 reference statements)

Supporting

Mentioning

484

Contrasting

Order By: Relevance

“…Today, these sensors have a considerable market share of all microelectromechanical systems (MEMS)-based sensors, with applications that include strain gauges, accelerometers, pressure, force, and inertial sensors, atomic force microscopy, and even data storage. 4 Nowadays, as applications require ever more sensitive sensors, research to find materials with larger piezoresistive factors is as active as ever. The sensitivity of a piezoresistive sensor is determined by the strain gauge factor, given by G = 1 R dR d , where R is the resistance and the strain.…”

Section: Introductionmentioning

confidence: 99%

Giant piezoresistance in silicon-germanium alloys

Murphy-Armando

Fahy

2012

Phys. Rev. B

View full text Add to dashboard Cite

Type of publicationArticle (peer-reviewed) We use first-principles electronic structure methods to show that the piezoresistive strain gauge factor of single-crystalline bulk n-type silicon-germanium alloys at carefully controlled composition can reach values of G = 500, three times larger than that of silicon, the most sensitive such material used in industry today. At cryogenic temperatures of 4 K we find gauge factors of G = 135 000, 13 times larger than that observed in Si whiskers. The improved piezoresistance is achieved by tuning the scattering of carriers between different ( and L) conduction band valleys by controlling the alloy composition and strain configuration.

show abstract

Section: Introductionmentioning

confidence: 99%

Giant piezoresistance in silicon-germanium alloys

Murphy-Armando

Fahy

2012

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…Strained silicon is, therefore, able to provide improved switching performance as the transistor dimension is aggressively scaled down in modern electronics 14,15 . Meanwhile, the large resistance response under strain has enabled the development of a myriad of silicon-based transducers 16 , such as strain and torque gauges, that are widely used in industrial applications.…”

mentioning

confidence: 99%

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

Zhang¹,

et al. 2017

View full text Add to dashboard Cite

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus 1 5 , the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for opto-electronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit 3,6 8 . Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the charge transport in black phosphorus at room temperature; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs). The effect opens up opportunities for future development of electro-mechanical transducers based on black phosphorus, and we demonstrate strain gauges constructed from black phosphorus thin crystals.Under mechanical strain, the deformation of the atomic lattice is able to induce profound changes in the electronic structure of a crystalline material. This is best exemplified in doped silicon, where strain alters the energy bands of electron or hole carriers; the transfer of carriers to bands with small effective mass leads to drastic enhancement of carrier mobility (and thus conductivity) 9 13 . Strained silicon is, therefore, able to provide improved switching performance as the transistor dimension is aggressively scaled down in modern electronics 14,15 . Meanwhile, the large resistance response under strain has enabled the development of a myriad of silicon-based transducers 16 , such as strain and torque gauges, that are widely used in industrial applications. Page 3 of 17Black phosphorus, a two-dimensional (2D) material with a puckered honeycomb lattice, offers new possibilities. The puckered lattice in a monolayer, shown in Fig. 1a, can be viewed as rows of two orthogonally coupled hinges along the zigzag direction 17 . The structure makes black phosphorus a soft, and yet mechanically resilient, material that can withstand large strain modulation 18 . More importantly, deformation of the puckers under strain changes the configuration of pz orbitals near the band edges 19 ; modulating the black phosphorus bandgap (and therefore its material properties) via strain becomes a possibility. Indeed, it has been shown that a moderate high pressure of ~1.2 GPa can close the bandgap, and raise the conductance by one order of magnitude at room temperature 20 ; modulation of the optical properties was also observed in corrugated black phosphorus sheets 21 . Those studies hinted at strain as a powerful tool to modulate the electronic and optical properties of black phosphorus.Here, we observe a large piezo-resistive effect in black phosphorus FETs at room temperature. The piezo-resistive response (defined as the relative change in sample resistance, , at a given strain, ) varies with the gate doping, and reac...

show abstract

“…5) was only 5.5 μm, but the maximal value of radial deformation of the membrane amounted to 7.8×10 -5 . If for the tensoresistors that are typically used in sensors [20,21], the working level of deformation is ~1×10 -4 , then deformations due to thermodeflection will have a significant impact on the result of measurement. Fig.…”

Section: R T T R H T T R T Hmentioning

confidence: 99%