Physics underlying the performance of back-surface-field solar cells

Silicon Solar Cells

“…The BSF field cell has been treated by computer modeling by von Roos (1978) and BSF theory is discussed by Fossum et al (1980). Eq.…”

Realization of 13.6% Efficiency on 20 μm Thick Si/Organic Hybrid Heterojunction Solar Cells via Advanced Nanotexturing and Surface Recombination Suppression

“…This N + layer not only directly improves the contact properties, but also delivers a back surface field that effectively reduces the recombination rate at the back surface via a downward band bending for reflecting holes (minority carrier). 10,21,22 Experimentally, the reconstructed-SiNPs with enlarged pore diameter were achieved using a novel MaCE process, which is illustrated in Figure 2a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 process initiated once the sample was transferred into the etchant solution of HF and H 2 O 2 . 23,24 Differently, in our study, a MaCE process with a solution comprised of …”

“…8,9 Regarding the surface recombination, it becomes a relatively more significant limiting factor to the J SC and V OC , because the bulk recombination is well reduced for the thin c-Si. 10 For the conventional bulk c-Si/PEDOT:PSS HHSCs, PCEs over 13% have been reported through the improvements in the interface properties, either on the front or the rear side of the c-Si. [11][12][13][14] For example, a 13.3% PCE was achieved with a V OC of 564 mV and a J SC of 32.6 mA cm -2 by modifying the PEDOT:PSS and reducing the defect density at Si/PEDOT:PSS interfaces.…”

Analysis of ‘anomalous’ I- V characteristics of silicon p+-n-n+photodiodes fabricated by boron implant through SiO2layers

“…The physical aspects discussed in this work restrict the use of the superposition principle (Fossum et al 1980, Lindholm et al 1979 in the analysis of such p+-n-n+ photocells. That is, the current-voltage characteristic of an illuminated cell could not be correctly described by the dark I-V characteristic (2) shifted by the short-circuit current density J,, .…”

“…The terminal voltage changes also in the illuminated mode when the cell is loaded (Fossum et al 1980, Lindholm et a/. 1979, due to the variation of the volume of the space charge region the share of different regions in the photocurrent generation varies significantly of Kc and F F (Table 2) lead to decreased voltage across the junction when the cells are loaded.…”