Silicon Solar Cells

Fahrenbruch, Alan L.; Bube, Richard H.

doi:10.1016/b978-0-12-247680-8.50013-x

Cited by 171 publications

(64 citation statements)

References 36 publications

(14 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The contact resistance R C of Mo on p-CIGS thin films was determined using the three-point method described elsewhere [9,10]. Variation of the current through contacts yields the I-V characteris- …”

Section: Methodsmentioning

confidence: 99%

Electrical and morphological properties of low resistivity Mo thin films prepared by magnetron sputtering

2006

View full text Add to dashboard Cite

Mo thin films have been deposited using a DC magnetron sputtering system with an S-gun configuration electrode and characterized electrically and morphologically. The influence of the sputtering gas pressure and glow discharge (GD) power, on the electrical resistivity of Mo thin films and on the contact resistivity of Mo to Cu(In,Ga)Se 2 (CIGS) films was determined through an exhaustive parameter study. This study also allowed us to find the conditions to deposit Mo films with suitable properties for its use as back contact of solar cells based on CIGS. Resistivities smaller than 1x10 −4 Ω.cm and contact resistivities smaller than 0.3 Ωcm 2 were found. Mo films with these characteristics are suitable for back contacts in solar cells based on CIGS. It was also found that the Mo thin films, deposited by DC magnetron sputtering on CIGS thin films, act effectively as ohmic contacts. The main contribution of this work was to obtain Mo thin films with adequate properties to be used as back contact for CIGS based solar cells using a DC sputtering system with S-gun configuration electrode, which allows growing the film with better surface quality and at a higher deposition rate than those deposited using the conventional planar RF sputtering system.

show abstract

Section: Methodsmentioning

confidence: 99%

Electrical and morphological properties of low resistivity Mo thin films prepared by magnetron sputtering

2006

View full text Add to dashboard Cite

show abstract

“…Já na região de absorção fundamental, observaramse variações na aresta de absorção em função da potência. A banda proibida dos filmes foi obtida desta região, utilizandose a Equação A, para o caso de transições diretas, onde: α é o coeficiente de absorção, calculado através da Equação B, c é uma constante, h é a constante de Planck, n é a frequência da radiação e Eg é a energia da banda proibida [17]. Na Equação B, d é a espessura (180 nm) e T é a transmitância do filme (a parcela da absorção referente ao vidro já está excluída deste valor).…”

Section: Otimização Do Processo De Deposição Dos Filmes Finos De Azounclassified

Propriedades de filmes finos de ZnO:Al depositados sobre substratos de poliimida à temperatura ambiente para aplicações em dispositivos optoeletrônicos flexíveis

et al. 2017

View full text Add to dashboard Cite

show abstract

“…It was shown in [96] that between the short-circuit and photocurrent in the point of maximum power the following relations are fulfilled with a good accuracy:…”

Section: Simulationmentioning

confidence: 99%

Untitled

2013

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Abstract. In this work, features of solar cells of lateral type were analyzed. The authors offered a design of a monolithic compact solar module with cells electrically connected in series and with a dispersion element (holographic grating). Simulation of a multistage converter was carried out. It has been shown that with increasing the number of cells n the maximum limited efficiency  increases. Its maximum values up to  ≈ 53.6% are reached for n = 15 (in the case of perfectly matched semiconductors and conditions AM0). With further increase of n , the efficiency decreases. For a set of concrete semiconductors  ≈ 45% the maximum efficiency for AM0 conditions may be achieved, when the number of cells equals 4. It has been shown that the calculation results agree with experimental data. The possibility of technical implementation of solar cells with using inkjet printers was investigated, too. Briefly discussed have been the properties of these printers, as well as metal, semiconductor and dielectric inks.

show abstract

Silicon Solar Cells

Cited by 171 publications

References 36 publications

Electrical and morphological properties of low resistivity Mo thin films prepared by magnetron sputtering

Electrical and morphological properties of low resistivity Mo thin films prepared by magnetron sputtering

Propriedades de filmes finos de ZnO:Al depositados sobre substratos de poliimida à temperatura ambiente para aplicações em dispositivos optoeletrônicos flexíveis

Untitled

Contact Info

Product

Resources

About