Electrical and morphological properties of low resistivity Mo thin films prepared by magnetron sputtering

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“…For a given deposition pressure the Mo film resistivity reduces as power increases in agreement with other reports [20][21][22]. …”

Section: Mo Growth and Na Diffusionsupporting

confidence: 92%

A combined Na and Cl treatment to promote grain growth in MOCVD grown CdTe thin films

Amirkhalili

Barrioz

Irvine

et al. 2017

Journal of Alloys and Compounds

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“…El sistema con la estructura Mo/CIS/Zn(O,OH)S/ZnO fue construido utilizando el siguiente procedimiento: como contacto eléctrico inferior de la celda se utilizó una película de Mo con un espesor de 1.1 µm; esta capa fue sintetizada utilizando un sistema de sputtering magnetrón DC con una configuración de electrodo tipo S-gun [8]. La capa absorbente CIS con 1 µm de espesor fue sintetizada por medio de coevaporación de In y Cu en una atmósfera de S utilizando un proceso de tres etapas [9].…”

Section: Methodsunclassified

Caracterización fisicoquímica del sistema Mo/CuInS2/Zn(O,OH)S/ZnO por medio de espectroscopía fotoelectrónica XPS y AES

Vallejo

Díaz‐Uribe

Hurtado

2014

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Resumen Las técnicas de espectroscopía en volumen y superficie son métodos analíticos muy confiables para realizar la caracterización de películas delgadas de diferentes materiales; en este trabajo se presentan resultados relacionados con la composición de la capa absorbente (CuInS 2 ) y la capa buffer Zn(O,OH)S en el sistema Mo/CuInS 2 /Zn(O,OH)S/ZnO. Las capas de CuInS 2 y ZnS fueron sintetizadas por co-evaporación y deposición de baño químico (CBD) respectivamente, el sistema fue caracterizado por medio de espectroscopia fotoelectrónica de rayos X (XPS) y todo el sistema fue estudiado por medio de espectroscopia electrónica Auger (AES). Los resultados de XPS indicaron que la capa buffer cubrió uniformemente la superficie de CuInS 2 , además se verificó que la capa buffer esta compuesta por una mezcla de diferentes compuestos. Finalmente la caracterización por AES en profundidad permitió determinar la composición de cada una de las películas del sistema fotovoltáico.Abstract Volume and surface spectroscopy techniques are reliable analytical methods to characterize thin films of different materials. This paper presents results related to the composition of the absorbing film (CuInS 2 ) and the Zn(O,OH)S buffer film within the Mo/CuInS 2 /Zn(O,OH)S/ZnO system. CuInS 2 and ZnS films were synthesized per co-evaporation and chemical bath deposition (CBD) respectively. The system was characterized through an X-ray photoelectron spectroscopy (XPS) and studied through the Auger electron spectroscopy (AES). The results of the XPS indicated that the buffer film covered uniformly the CuInS 2 surface, and we were able to verify that this film is created by a mixture of different compounds. Finally, the AES characterization allowed us to determine the composition of each one of the films of the photovoltaic system. Palabras Clave: espectroscopía, CuInS 2 , voltaje, películas delgadas, celdas solares.

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“…Mo also emerged as the dominant choice for back contact layer of CuInSe 2 (CIS) and its gallium alloys (CIGS)-based solar cells because of its relative stability at the processing temperature, resistance to alloying with Cu and In, and its low contact resistance to CIS [7,8,6,1,3]. As the quality of the CIS film, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…Besides, low Argon mass-flow rates can reduce micropores and increase optical reflectance. Gordillo et al [3] deposited Mo thin films using a DC magnetron sputtering system with S-gun configuration electrode. They showed that it is possible to get low resistivity Mo films by decreasing the Argon partial pressure and increasing the power of the glow discharge.…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of DC sputtered molybdenum thin films

Kashyout

Soliman

Abou-Gabal

et al. 2011

Alexandria Engineering Journal

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Molybdenum (Mo) thin films have been deposited on soda-lime glass substrates using a DC magnetron sputtering system. Their electrical resistivity, and their morphological, structural and adhesive properties have been examined with respect to the deposition power, deposition time and substrate temperature. The electrical resistivity of the Mo films could be reduced by increasing any of the above parameters. Within the range of the investigated deposition parameters, the films showed a mono-crystalline nature with a preferred orientation along the (1 1 0) plane. The Mo films adhesion to the soda-lime glass could be improved by increasing the substrate temperature. At a deposition power of 200 W, deposition time of 20 min and substrate temperature of 450°C, Mo thin film exhibiting mono-crystalline structure with thickness equal to 450 nm and electrical resistivity equal to 1.85 · 10 À4 X cm was obtained.ª 2011 Faculty of Engineering, Alexandria University. Production and hosting by Elsevier B.V.All rights reserved.

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Electrical and morphological properties of low resistivity Mo thin films prepared by magnetron sputtering

Cited by 65 publications

References 11 publications

A combined Na and Cl treatment to promote grain growth in MOCVD grown CdTe thin films

A combined Na and Cl treatment to promote grain growth in MOCVD grown CdTe thin films

Caracterización fisicoquímica del sistema Mo/CuInS2/Zn(O,OH)S/ZnO por medio de espectroscopía fotoelectrónica XPS y AES

Preparation and characterization of DC sputtered molybdenum thin films

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