International Journal of Electronics
 1989
DOI: 10.1080/00207218908925380
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Analysis of ‘anomalous’ I- V characteristics of silicon p+-n-n+photodiodes fabricated by boron implant through SiO2layers

A. Silard
1

Abstract: To cite this article: ANDREI P. SILARD (1989) Analysis of 'anomalous' I-V characteristics of silicon p + -n-n + photodiodes fabricated by boron implant through

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