Articles you may be interested inAlternating current-generated plasma discharges for the controlled direct current charging of ferroelectrets Evidence of currentgenerated spatially periodic space charge in a semiconductorThe work reports the development of "preferentially current-generating" p+ -n-n+ silicon solar cells. The distinctive trait of developed devices is their extremely large short-circuit current density J sc = 38-39.7 mA/cm 2 , which is the highest valueofJ sc reported thus far in the literature for "back-surface-field" -type cells under AM 1 conditions. The conversion efficiency of test cells ranged from 17.1 to 18.15%. The results of this work show clearly that a simple, but adequately designed/processedp + -n-n + cell fabricated in industrial environment on large area (2 in.) silicon wafers could possess parameters similar or superior to those of sophisticated laboratory samples elaborated on small area silicon chips.
Prompted by recent experimental results and based upon a critical appraisal of the previous approaches to the topic, a simple yet thorough analysis of physical effects induced in p-n-p-n-like silicon structures by the high rate of the OFF-state forward anode voltage rise (dV/dt) was performed. The importance of n-base parameters in shaping the faulty triggering of thyristors subjected to dV/dt ramps is clearly demonstrated for the first time in the literature. The main implications of the findings for thyristor physics and design are also outlined in this work.
This work presents the main electrooptical parameters of a p +-n-n + single-crystalline silicon solar cell, whose front p + -n junction and the backside n-n+ contact were fabricated through masked ion implantation of boron (11 B f ) and phosphorus (31p+), respectively. The distinctive feature of the cells consists of the use of the front junction silicon dioxide mask as an AR layer in the finished devices.
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