High-temperature physical effects underlying the failure mechanism in thyristors under surge conditions

Silard, A.

doi:10.1109/t-ed.1984.21709

Cited by 14 publications

(4 citation statements)

References 14 publications

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“…The surge-current behaviour for different IGBT designs is discussed in [3,7]. Further details regarding the surge-current theory of bipolar devices can be found in [8][9][10][11]. The degradation of the chip solder by ageing has a strong influence on the surgecurrent capability of the IGBT and has been discussed in [12].…”

Section: Introductionmentioning

confidence: 99%

Surge-Current capability of the different voltage class IGBTs

Mysore,

Alaluss,

Fraas

et al. 2023

ISPS'23 Proceedings

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In this work, the surge-current capability of 650 V, 1200 V, and 1700 V IGBTs has been investigated. This stress condition is important for the active short-circuit of motor loads. For all measurement conditions, the destruction of the devices is not determined by the onset of intrinsic conductivity. Instead, the failure signature indicates a temperature-driven destruction mechanism. For the applied gateemitter voltages, the 650 V IGBTs show the highest surge-current density withstand capability in comparison to 1200 V and 1700 V IGBTs due to their higher saturation current density. The surgecurrent capability of 1200 V and 1700 V IGBTs is not influenced by the amount of emitter bond wires even at a gate-emitter voltage of 25 V, whereas it is reduced for 650 V IGBTs with a reduced number of bond wires.

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Section: Introductionmentioning

confidence: 99%

Surge-Current capability of the different voltage class IGBTs

Mysore,

Alaluss,

Fraas

et al. 2023

ISPS'23 Proceedings

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“…For press-pack thyristors or diodes, a typical immediate failure mechanism associated with destructive surge currents is the melting of the silicon structure itself. This is triggered by current filamentation at localized hot spots caused by a thermal runaway effect based on the high intrinsic conductivity of silicon at high temperatures: the device becomes thermally unstable [6,7,8].…”

mentioning

confidence: 99%

Topology, Design, and Characteristics of a Modular, Dynamic 100 kA Surge Current Source With Adjustable Current Shape

Wettengel,

Hoffmann,

Kienast

et al. 2024

IEEE Open J. Ind. Applicat.

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To guarantee sufficient surge current fault protection for power electronic converters, power semiconductors have to be tested under appropriate surge current conditions. Standard maximum surge current values include the permissible fault current amplitude, or the I 2 t-value; however, they might not be sufficient to describe a power semiconductor's performance under all potential fault conditions. Surge current sources based on passive components are state of the art, but are limited to usually only one specific current waveform. This paper describes the topology and the design of a new modular and highly dynamic Surge Current Source for power semiconductor tests with adjustable current waveforms. The new modular converter concept is introduced, with two potential operation modes: High Current Mode (HCM) and Dynamic Current Mode (DCM). The requirements for the Surge Current Tester are defined, and the electrical and mechanical design are described, including the modulation scheme and control. Experimental investigations prove the function of the current source with peak currents up to 100 kA (HCM) and the realization of highly dynamic load current trajectories with peak currents up to 50 kA (DCM). The output current ripple is exceptionally small with a theoretical value of below 1 %.

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“…Finite element (FE) techniques can also be applied to thermal modelling problems and have been reported by amongst others Wenthen [3], Drexel [ 131 and Domingos [14]. More recently Silard [4] has taken into account actual device physics in the modelling process -unlike any of the previously mentioned techniques which consider only the application of a power pulse at the silicon surface and treat the device simply as a layer of silicon. FE techniques have.…”

Section: Development Of a Thermal Model For Use In Peak Current Determentioning

confidence: 99%

“…Published results for thermal simulations of temperature profiles in thyristors in response to exponential current pulses are not common, so only qualitative comparisons between published temperature profiles of Silard [4] (simulated) and Jaecklin et al [5] (measured) with those generated from our SPICE model could be made. Although these profiles are for current pules conditions for which the SPICE based model was not designed, both represent current densities for which the operating physics are similar to those the model simulates.…”

Section: Validation Of the Modelmentioning

confidence: 99%

A SPICE based thermal model for the estimation of peak current capability of thyristor based devices

Wilson

Scott

Moult

et al.

[1992] Proceedings of the IEEE International Symposium on Industrial Electronics

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A b s m . A thermal model of a thyristor, using an electrical analogue to heat flow in a layer, developed for use in the prediction of peak current capability of p-n-p-n devices, is presented. For any given current, a power waveform, representing the total power dissipated in the device for that current, is generated. This is then distributed over three heat sources representing the main locations of heat generation in an actual device.Comparisons with published data and experimental results yield close agreement with model predictions, indicating the validity of the approach. The model has also been used successfully in the development of thyristor based surge protectors.

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High-temperature physical effects underlying the failure mechanism in thyristors under surge conditions

Cited by 14 publications

References 14 publications

Surge-Current capability of the different voltage class IGBTs

Surge-Current capability of the different voltage class IGBTs

Topology, Design, and Characteristics of a Modular, Dynamic 100 kA Surge Current Source With Adjustable Current Shape

A SPICE based thermal model for the estimation of peak current capability of thyristor based devices

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